2SA1776TV2Q

Single Bipolar Transistors Overview

The 2SA1776TV2Q is a PNP silicon epitaxial planar transistor manufactured by ROHM Semiconductor, designed for general-purpose switching and amplification applications. It features a maximum collector current of 0.5 A and a collector-emitter breakdown voltage (VCEO) of 30 V. The device operates with a DC current gain (hFE) ranging from 140 to 280 at IC = -50 mA and VCE = -5 V. It is housed in an SOT-89 surface-mount package, offering a power dissipation capability of 1 W at 25°C ambient temperature. The transistor exhibits a transition frequency (fT) of 150 MHz, ensuring adequate performance for high-speed switching circuits.

Single Bipolar Transistors Feature Summary

• Utilizes silicon epitaxial planar technology for robust reliability and consistent electrical characteristics.
• Provides high DC current gain suitable for efficient signal amplification and driver stages.
• Engineered with a low saturation voltage to minimize power loss during conduction states.
• Designed for high-speed switching operations supported by a transition frequency of 150 MHz.

Single Bipolar Transistors Applications

• General-purpose amplifier circuits
• High-speed switching applications
• Driver transistors for relay or motor control

Single Bipolar Transistors Procurement Notes

Verify the specific suffix TV2Q against the manufacturer's latest datasheet to confirm packaging details and tape-and-reel specifications. Ensure compatibility with RoHS directives if required by your assembly process. Cross-reference the part number with authorized distributors to confirm current availability and lead times, as electronic component supply chains can fluctuate. Always check for any recent design-life notices or obsolescence warnings directly from ROHM Semiconductor before finalizing procurement plans.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with 30 V VCEO and 0.5 A continuous current rating is required in an SOT-89 package. Consider its 150 MHz transition frequency for applications needing moderate switching speeds. Evaluate the thermal resistance and power dissipation limits relative to your circuit's heat sinking capabilities. Compare the hFE range against your biasing requirements to ensure stable operation across different operating temperatures and load conditions.

Single Bipolar Transistors Part Context

The 2SA1776TV2Q belongs to ROHM's lineup of small-signal PNP transistors, sharing technological similarities with the 2SA1727 and 2SA1812 series. These devices are commonly used in consumer electronics and industrial control systems where compact surface-mount solutions are preferred. The SOT-89 package provides a balance between thermal performance and board space efficiency, making it suitable for dense PCB layouts.

Single Bipolar Transistors Replacement Considerations

Direct replacements may include the 2SA1727 or 2SA1812, which share similar electrical characteristics and pinouts. Verify that substitute parts meet the same voltage, current, and package requirements. Check for any differences in hFE grading or thermal resistance that might impact circuit performance.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage for the 2SA1776TV2Q?

The maximum collector-emitter breakdown voltage (VCEO) is 30 V.

In which package is the 2SA1776TV2Q available?

It is available in an SOT-89 surface-mount package.

What is the typical DC current gain range?

The DC current gain (hFE) ranges from 140 to 280 when measured at IC = -50 mA and VCE = -5 V.