2SA1837,HFEMBJF(J

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SA1837 is a silicon PNP epitaxial transistor designed for power amplifier and driver stage applications. It features a high transition frequency of 70 MHz (typical). The device supports a collector current of -1 A and withstands collector-emitter voltages up to -230 V. Power dissipation reaches 20 W at a case temperature of 25°C, with a maximum junction temperature of 150°C. It is packaged in the TO-220NIS format.

Single Bipolar Transistors Feature Summary

• High transition frequency suitable for RF amplification tasks
• Complementary pairing with the 2SC4793 NPN transistor
• Robust power handling capabilities for driver stages

Single Bipolar Transistors Applications

• Power amplifier circuits
• Driver stage amplifiers

Single Bipolar Transistors Procurement Notes

Verify RoHS compliance status directly with the manufacturer or authorized distributor, as legacy variants may differ. Confirm the specific ordering suffix matches the required lead-free finish. Review the Toshiba Semiconductor Reliability Handbook for derating guidelines before finalizing designs. Ensure the package type aligns with thermal management requirements.

Single Bipolar Transistors Selection Notes

Select this component when designing complementary pairs requiring a PNP counterpart to the 2SC4793. Evaluate the safe operating area curves against expected load conditions. Consider the thermal resistance characteristics for heat sink sizing. Verify that the -230 V breakdown voltage meets the circuit's peak voltage demands.

Single Bipolar Transistors Part Context

This part belongs to the Toshiba Silicon PNP Epitaxial Type series. It is engineered specifically for audio and RF power amplifier topologies. The device utilizes a planar structure to ensure stable performance under high-frequency operation. It serves as a standard discrete solution for medium-power amplification stages.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SC4793 as the complementary NPN transistor. No other direct substitute part numbers are documented in the provided source material.