2SA1873-GR(TE85L,F

Overview

The 2SA1873-GR(TE85L,F is a dual PNP bipolar junction transistor (BJT) array in surface-mount USV packaging. It features a collector-emitter voltage of -50 V and a maximum continuous collector current of -150 mA. The device has a power dissipation rating of 200 mW and a gain-bandwidth product of 80 MHz. It operates at a junction temperature up to 125°C and is supplied in tape-and-reel packaging.

Feature Summary

• Dual matched PNP transistor configuration for common emitter applications
• High voltage capability with -50 V collector-emitter breakdown
• Compact surface-mount USV package design

Applications

• Audio frequency general purpose amplifier circuits
• Small signal processing stages
• General purpose switching applications

Procurement Notes

Verify the specific ordering suffix matches the required tape-and-reel quantity and lead time requirements. Confirm that the USV package dimensions align with the target PCB footprint. Ensure the manufacturer designation corresponds to Toshiba Semiconductor and Storage to guarantee component authenticity and datasheet accuracy.

Selection Notes

Select this component when a matched pair of PNP transistors is required for differential or push-pull configurations. The -50 V rating suits low-voltage logic interfaces. Consider the 80 MHz bandwidth for audio or intermediate frequency signals. The dual package reduces board space compared to discrete single transistors.

Part Context

This part belongs to Toshiba's small-signal BJT array family. It provides two matched PNP transistors in a single SC-70-5 compatible outline. The matching ensures consistent performance between the two devices, which is critical for balanced circuit designs requiring symmetry.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical parameters before considering alternative manufacturers.