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The 2SA1873-Y(TE85L,F) is a Bipolar (BJT) Transistor Array manufactured by Toshiba Semiconductor and Storage. It features two PNP transistors configured as a dual matched pair in a common emitter arrangement. The device supports a maximum collector-emitter voltage of 50V and a continuous collector current of 150mA. It offers a transition frequency of 80MHz and a power dissipation rating of 200mW. The component is designed for surface mount installation using the USV package.
Verify the specific suffix TE85L,F against official Toshiba documentation to confirm tape and reel specifications. Ensure the procurement channel sources directly from authorized distributors to guarantee authenticity. Cross-reference the manufacturer part number with the requested design requirements before finalizing orders.
Select this component when a dual matched PNP pair is required for low-voltage, high-frequency applications. The 50V rating and 150mA current capacity define its operational limits. Consider the USV surface mount package for space-constrained PCB layouts. Verify thermal management capabilities given the 200mW power dissipation constraint.
This part belongs to Toshiba's discrete transistor array family, specifically designed for compact electronic designs. The 2SA1873 series provides matched characteristics to minimize offset errors in differential or bridge configurations. It serves as a standard solution for small-signal processing tasks in consumer and industrial electronics.
The 2SA1873-GR(TE85L,F) is a confirmed public substitute within the same product line. Both variants share identical electrical specifications and pinout configurations. Verify package compatibility and thermal performance when substituting.