Single Bipolar Transistors 2SA1930,CKQ(J product image

2SA1930,CKQ(J

  • Description:TRANS PNP 180V 2A TO-220NIS
  • Series:-

SKU:403dcbbcd930 Category: Brand:

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2SA1930,CKQ(J is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS PNP 180V 2A TO-220NIS. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SA1930,CKQ(J

  • Description:TRANS PNP 180V 2A TO-220NIS
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Bulk
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):2:00 AM
  • Voltage - Collector Emitter Breakdown (Max):180 V
  • Vce Saturation (Max) @ Ib, Ic:1V @ 100mA, 1A
  • Current - Collector Cutoff (Max):5µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 100mA, 5V
  • Power - Max:2 W
  • Frequency - Transition:200MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3 Full Pack
  • Supplier Device Package:TO-220NIS
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SA1930,CKQ(J

2SA1930,CKQ(J

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SA1930 is a silicon PNP epitaxial type power transistor designed for amplifier applications. It features a maximum collector-emitter voltage of -180 V and a continuous collector current rating of -2 A at an ambient temperature of 25°C. The device provides a typical transition frequency (fT) of 200 MHz, ensuring high-speed performance. Electrical characteristics include a minimum DC current gain (hFE) of 100 at -0.1 A collector current and a maximum saturation voltage of -1.0 V under specified drive conditions.

Single Bipolar Transistors Feature Summary

  • High transition frequency capability for efficient signal amplification
  • Complementary pairing with the 2SC5171 NPN transistor
  • Robust thermal management with a junction temperature rating up to 150°C

Single Bipolar Transistors Applications

  • Power amplifier circuits
  • Driver stage amplifiers

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official Toshiba documentation to confirm package variations or lead-free status. Confirm RoHS compliance directly with the manufacturer or authorized distributor prior to procurement. Ensure the component meets all applicable safety standards required for the final system design.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring high-voltage handling and significant current capacity in a single package. Evaluate the safe operating area curves to ensure operation remains within thermal limits during peak load conditions. Consider the complementary 2SC5171 for push-pull configurations to maximize efficiency.

Single Bipolar Transistors Part Context

This part belongs to the Toshiba 2SA series of PNP bipolar junction transistors. These components are engineered for general electronics applications, offering a balance of high voltage tolerance and current handling capabilities suitable for audio and RF driver stages.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SC5171 as the complementary NPN counterpart. Verify pinout compatibility and electrical parameters before substituting with other generic PNP transistors.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage rating?

The absolute maximum rating for collector-emitter voltage (VCEO) is -180 V.

Is this transistor compatible with the 2SC5171?

Yes, the datasheet specifies that the 2SA1930 is complementary to the 2SC5171.

What is the typical transition frequency?

The typical transition frequency (fT) is 200 MHz.

2SA1930,CKQ(J2SA1930,CKQ(J

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