SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
2SA1930(Q,M) is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS PNP 180V 2A TO-220NIS. Review the specifications below when checking this part for your BOM.
The Toshiba Semiconductor and Storage 2SA1930(Q,M) is a silicon PNP epitaxial planar transistor housed in a TO-220F package. It features a collector-emitter breakdown voltage of -180 V, a maximum collector current of -2 A, and a power dissipation rating of 2 W at 25°C ambient temperature. The device exhibits a typical transition frequency of 200 MHz and a DC current gain ranging from 50 to 320 depending on operating conditions.
Verify component authenticity by inspecting the marking code 'A1930' on the device surface. Confirm that the lot number corresponds to lead-free specifications if required by your design constraints. Ensure the ordering suffix matches the specific packaging variant needed for your assembly process.
Select this component when designing circuits requiring high-speed switching or amplification with a maximum collector-emitter voltage of 180 V. Its complementary relationship with the 2SC5171 makes it suitable for push-pull configurations. Evaluate thermal management requirements carefully, as power dissipation drops significantly above 25°C ambient temperature.
This part belongs to the Toshiba 2SA series of bipolar junction transistors. It is specifically engineered for general-purpose audio and RF applications where moderate power handling and high-frequency response are necessary. The TO-220F package facilitates through-hole mounting and heatsink attachment for efficient thermal dissipation.
The 2SC5171 serves as the direct complementary match for this transistor. Verify pinout compatibility and electrical parameters against alternative PNP transistors before substitution.
Explore related parts through Bipolar (BJT), Transistors, Discrete Semiconductor Products, all product categories.