2SA1955FVATPL3Z

$0.18

Description：TRANS PNP 12V 0.4A CST3
Series：-

SKU:cbd7dbf13eee Category: Single Bipolar Transistors Brand: Toshiba Semiconductor and Storage

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Product introduction

2SA1955FVATPL3Z is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS PNP 12V 0.4A CST3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SA1955FVATPL3Z

Description：TRANS PNP 12V 0.4A CST3
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：PNP
Current - Collector (Ic) (Max)：400 mA
Voltage - Collector Emitter Breakdown (Max)：12 V
Vce Saturation (Max) @ Ib, Ic：250mV @ 10mA, 200mA
Current - Collector Cutoff (Max)：100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：300 @ 10mA, 2V
Power - Max：100 mW
Frequency - Transition：130MHz
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SC-101, SOT-883
Supplier Device Package：CST3
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2SA1955FVATPL3Z

2SA1955FVATPL3Z

Single Bipolar Transistors Overview

The Toshiba 2SA1955FV is a silicon PNP epitaxial transistor designed for general-purpose amplifier, switching, and muting applications. It features a low saturation voltage of −15 mV (typical) at IC = −10 mA and IB = −0.5 mA. The device supports a maximum collector current of −400 mA and operates with a collector-emitter voltage rating of −12 V. Electrical characteristics include a DC current gain (hFE) ranging from 300 to 1000, a transition frequency (fT) of up to 130 MHz, and a collector power dissipation of 150 mW when mounted on an FR4 board.

Single Bipolar Transistors Feature Summary

Low saturation voltage for efficient signal handling
High DC current gain for amplification stability
Fast switching speed suitable for muting circuits

Single Bipolar Transistors Applications

General purpose amplifier circuits
Switching applications
Muting switch applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix matches the required binning or packaging format. Confirm RoHS compliance status directly with the manufacturer as indicated in the datasheet restrictions. Ensure the design accounts for the absolute maximum ratings, particularly junction temperature limits and derating requirements under heavy loads.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring high hFE linearity and low VCE(sat). Consider the 150 mW power dissipation limit and ensure adequate thermal management on the PCB. Verify that the −12 V collector-emitter voltage rating aligns with the circuit's operating conditions.

Single Bipolar Transistors Part Context

This part belongs to the Toshiba 2SA series of PNP small-signal transistors manufactured using the PCT process. These devices are optimized for low-voltage, low-power applications in consumer electronics and office equipment. The 2SA1955FV specifically targets audio and signal processing tasks where low distortion and fast response are critical.