2SA1978-A

Description：RF TRANS PNP 12V 5.5GHZ
Series：-

SKU:35618fbe8a24 Category: Bipolar RF Transistors Brand: CEL

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Product introduction

Product Detailed Parameters

Description：RF TRANS PNP 12V 5.5GHZ
Series：-
Mfr：CEL
Package：Strip
Transistor Type：PNP
Voltage - Collector Emitter Breakdown (Max)：12V
Frequency - Transition：5.5GHz
Noise Figure (dB Typ @ f)：2dB @ 1GHz
Gain：10dB
Power - Max：200mW
DC Current Gain (hFE) (Min) @ Ic, Vce：20 @ 15mA, 10V
Current - Collector (Ic) (Max)：50mA
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-236-3, SC-59, SOT-23-3
Supplier Device Package：-
Grade：-
Qualification：-

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2SA1978-A

Overview

The CEL 2SA1978-A is a PNP epitaxial silicon transistor designed for microwave amplifier applications. It features a transition frequency of 5.5 GHz and provides a typical gain of 10 dB at 1 GHz with a collector current of -15 mA and Vce of -10 V. The device has a maximum collector current of 50 mA, a breakdown voltage of 12 V, and a power dissipation rating of 200 mW. It utilizes an SOT-23 surface mount package and exhibits a typical noise figure of 2 dB at 1 GHz.

Feature Summary

High transition frequency suitable for microwave amplification
Low noise figure performance at RF frequencies
Surface mount construction in compact SOT-23 package

Applications

Microwave amplifier circuits
RF signal processing stages
High-speed switching applications

Procurement Notes

Verify the specific suffix (e.g., -A) against manufacturer documentation to confirm exact electrical tolerances and binning. Ensure the component source matches the specified brand CEL and not generic equivalents. Confirm package integrity and pinout alignment with SOT-23 standards before integration into high-frequency designs.

Selection Notes

Select this component when designing circuits requiring PNP topology with high-frequency operation up to 5.5 GHz. Consider the 12V breakdown limit and 50mA current constraint for biasing networks. The SOT-23 form factor suits space-constrained PCB layouts where surface mounting is required for RF stability.

Part Context

This part belongs to the discrete semiconductor product category, specifically within bipolar junction transistors optimized for radio frequency use. It serves as a specialized active element for amplifying signals in the UHF and microwave bands, differing from general-purpose switching transistors by its focus on gain and noise characteristics.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with direct replacements only if official datasheets specify equivalent electrical parameters and pin configurations.