Single Bipolar Transistors 2SA2059(TE12L,F) product image

2SA2059(TE12L,F)

$0.83
  • Description:TRANS PNP 20V 3A PW-MINI
  • Series:-

SKU:c33b9ea480c6 Category: Brand:

  
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2SA2059(TE12L,F) is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS PNP 20V 3A PW-MINI. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SA2059(TE12L,F)

  • Description:TRANS PNP 20V 3A PW-MINI
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):3:00 AM
  • Voltage - Collector Emitter Breakdown (Max):20 V
  • Vce Saturation (Max) @ Ib, Ic:190mV @ 53mA, 1.6A
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 500mA, 2V
  • Power - Max:1 W
  • Frequency - Transition:-
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-243AA
  • Supplier Device Package:PW-MINI
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SA2059(TE12L,F)

2SA2059(TE12L,F)

Single Bipolar Transistors Overview

The Toshiba 2SA2059(TE12L,F) is a single PNP silicon epitaxial transistor in an SC-62-3 package. It supports a maximum collector current of −3.0 A and a collector-emitter voltage of −20 V. The device features a DC current gain (hFE) ranging from 200 to 500 at −0.5 A, with a low collector-emitter saturation voltage of −0.19 V max at −1.6 A. Switching performance includes a typical fall time of 40 ns. Power dissipation reaches 2.5 W on an FR4 board, operating within a junction temperature range up to 150°C.

Single Bipolar Transistors Feature Summary

  • High-speed switching capability with a typical fall time of 40 ns
  • Low collector-emitter saturation voltage for efficient conduction
  • High DC current gain across specified operating currents

Single Bipolar Transistors Applications

  • DC-DC converter circuits
  • Strobe driver applications
  • General high-speed switching designs

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official documentation to confirm environmental compliance status. Confirm that the component matches the required JEITA SC-62 package dimensions and pinout configuration before integration into the final assembly design.

Single Bipolar Transistors Selection Notes

Select this component when circuit requirements demand a PNP transistor with a −20 V rating and high current handling near −3 A. Ensure thermal management accommodates the 2.5 W power dissipation limit under continuous operation conditions.

Single Bipolar Transistors Part Context

This part belongs to the 2SA series of PNP transistors manufactured by Toshiba Semiconductor and Storage. It utilizes a silicon epitaxial planar construction designed specifically for robust performance in high-frequency and high-current switching environments.

Single Bipolar Transistors Replacement Considerations

Consult official manufacturer substitution lists for verified alternatives. Do not assume functional equivalence based solely on similar electrical ratings without confirming pinout compatibility and package specifications.

2SA2059(TE12L,F)2SA2059(TE12L,F)
$0.83
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