2SA2215,LF

Single Bipolar Transistors Overview

The Toshiba 2SA2215,LF is a silicon PNP epitaxial transistor designed for high-speed switching applications. It features a maximum collector current of 2.5 A and a collector-emitter voltage rating of 20 V. The device achieves a low collector-emitter saturation voltage of -0.19 V (max) at an IC of -1.6 A. Electrical characteristics include a DC current gain ranging from 200 to 500 at -0.5 A. The component supports a typical fall time of 40 ns and operates within a junction temperature range up to 150 °C.

Single Bipolar Transistors Feature Summary

• High DC current gain with values between 200 and 500 at a collector current of -0.5 A
• Low collector-emitter saturation voltage of -0.19 V (max) under heavy load conditions
• Fast switching performance characterized by a typical fall time of 40 ns

Single Bipolar Transistors Applications

• DC-DC Converter Applications
• Strobe Applications
• High-Speed Switching Applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and tape-and-reel specifications. Ensure compliance with RoHS directives as indicated in the product datasheet. Confirm that the intended operating parameters remain within the absolute maximum ratings defined by Toshiba Semiconductor and Storage.

Single Bipolar Transistors Selection Notes

Select this component for circuits requiring fast turn-off times and high current handling capabilities. The device is suitable for designs needing a low saturation voltage to minimize power loss during conduction. Evaluate thermal management requirements based on the specified power dissipation limits for both ceramic and FR4 mounting configurations.

Single Bipolar Transistors Part Context

This component belongs to the category of bipolar junction transistors manufactured by Toshiba Semiconductor and Storage. It utilizes a silicon PNP epitaxial structure optimized for rapid switching operations. The device is housed in a surface-mount package compatible with standard automated assembly processes.

Single Bipolar Transistors Replacement Considerations

Consult official replacement guides or contact Toshiba Semiconductor and Storage representatives for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers' devices without verifying pinout and electrical parameter alignment.

Single Bipolar Transistors FAQ

What is the typical fall time for the 2SA2215?

The typical fall time is 40 ns when tested under specified conditions.

What is the maximum collector-emitter breakdown voltage?

The maximum collector-emitter breakdown voltage is -20 V.

Does the 2SA2215 support high DC current gain?

Yes, it provides a DC current gain ranging from 200 to 500 at a collector current of -0.5 A.