Single Bipolar Transistors 2SA562-O-AP product image

2SA562-O-AP

  • Description:TRANS PNP 30V 0.5A TO-92
  • Series:-

SKU:3f3b650753e7 Category: Brand:

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2SA562-O-AP is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists MCC (Micro Commercial Components). Its product description is TRANS PNP 30V 0.5A TO-92. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SA562-O-AP

  • Description:TRANS PNP 30V 0.5A TO-92
  • Series:-
  • Mfr:MCC (Micro Commercial Components)
  • Package:Tape & Box (TB)
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):500 mA
  • Voltage - Collector Emitter Breakdown (Max):30 V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 100mA, 1V
  • Power - Max:500 mW
  • Frequency - Transition:200MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
  • Supplier Device Package:TO-92
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SA562-O-AP

2SA562-O-AP

Single Bipolar Transistors Overview

The 2SA562-O-AP is a PNP silicon transistor manufactured by Micro Commercial Components (MCC) in a TO-92 package. It features a collector-emitter voltage of -30 V, collector-base voltage of -35 V, and emitter-base voltage of -5.0 V. The device supports a maximum collector current of -500 mA and power dissipation of 500 mW. The 'O' suffix indicates an hFE rank of 70 to 140 at -100 mA. Transition frequency reaches 200 MHz, with a collector output capacitance of 13 pF.

Single Bipolar Transistors Feature Summary

  • Epoxy casing meets UL 94 V-0 flammability rating
  • Moisture sensitivity level 1 classification
  • Lead-free finish compliant with RoHS standards

Single Bipolar Transistors Applications

  • General-purpose amplification circuits
  • Electronic switching applications
  • Low-power signal processing stages

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix to confirm the hFE gain bin, as the 'O' designation specifies a 70 to 140 range. Confirm the packaging type matches project requirements, distinguishing between bulk and ammo pack configurations. Ensure compliance with moisture sensitivity level 1 handling protocols during storage and assembly processes.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring a standard PNP transistor with moderate current capabilities and low saturation voltage. The TO-92 through-hole package facilitates easy prototyping and manual assembly. Consider the specific hFE bin required for amplifier linearity when choosing between the O and Y variants.

Single Bipolar Transistors Part Context

This part belongs to the 2SA562 series of PNP silicon transistors produced by Micro Commercial Components. The series is designed for general-purpose use in consumer electronics and industrial control systems. The TO-92 form factor provides a compact solution for discrete circuit implementations requiring reliable switching performance.

Single Bipolar Transistors Replacement Considerations

Cross-reference with other PNP transistors offering similar -30 V ratings and -500 mA current capacity. Verify pinout compatibility and thermal characteristics before substitution. Ensure replacement parts meet the same UL 94 V-0 and RoHS compliance standards.

Single Bipolar Transistors FAQ

What is the DC current gain range for the 2SA562-O variant?

The 'O' suffix designates an hFE rank ranging from 70 to 140 when measured at a collector current of -100 mA.

Does the 2SA562-O-AP support high-frequency operation?

Yes, the device has a transition frequency (fT) of up to 200 MHz under specified test conditions.

What is the maximum power dissipation for this transistor?

The maximum collector power dissipation is rated at 500 mW.

2SA562-O-AP2SA562-O-AP

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