2SA949-O(TE6,F,M)

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SA949-O(TE6,F,M) is a silicon PNP triple diffused transistor designed for driver-stage audio amplifier and high-voltage switching applications. It features a collector-emitter breakdown voltage of −150 V, a maximum collector current of −50 mA, and a power dissipation rating of 800 mW at 25°C ambient temperature. The device exhibits a typical transition frequency of 120 MHz and a low output capacitance of 4.0 pF (maximum 5.0 pF). It operates within a junction temperature range up to 150 °C and utilizes a JEDEC TO-92MOD package.

Single Bipolar Transistors Feature Summary

• Triple diffused silicon construction optimized for high-voltage switching and audio driver stages
• High breakdown voltage capability with a collector-emitter rating of −150 V
• Low output capacitance characteristic supporting high-frequency performance
• High transition frequency enabling efficient operation in driver-stage circuits

Single Bipolar Transistors Applications

• Driver-stage audio amplifiers
• High-voltage switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official Toshiba documentation to confirm environmental compliance status, such as RoHS compatibility, as indicated by lot number markings. Confirm that the component meets the intended application's reliability requirements by consulting the Toshiba Semiconductor Reliability Handbook regarding derating concepts and methods under heavy load conditions.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring a PNP transistor with a −150 V collector-emitter voltage rating and a maximum continuous collector current of −50 mA. Ensure the design accommodates the 800 mW power dissipation limit at 25°C ambient temperature and requires a transition frequency suitable for audio driver or general high-voltage switching tasks within the specified operating temperature range.

Single Bipolar Transistors Part Context

This component belongs to the 2SA series of silicon PNP transistors manufactured by Toshiba Semiconductor and Storage. The 2SA949 variant specifically targets applications demanding high breakdown voltage combined with low output capacitance. It is housed in a standard through-hole TO-92MOD package, distinguishing it from surface-mount or higher-power variants within the broader product family.

Single Bipolar Transistors Replacement Considerations

Consult official Toshiba documentation for confirmed substitute part numbers. Verify pinout compatibility and electrical parameter alignment before substituting.