2SA949-Y(JVC1,F,M)

Description：TRANS PNP 150V 0.05A TO-92MOD
Series：-

SKU:edc33ebdd6d8 Category: Single Bipolar Transistors Brand: Toshiba Semiconductor and Storage

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Product introduction

2SA949-Y(JVC1,F,M) is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS PNP 150V 0.05A TO-92MOD. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SA949-Y(JVC1,F,M)

Description：TRANS PNP 150V 0.05A TO-92MOD
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Bulk
Transistor Type：PNP
Current - Collector (Ic) (Max)：50 mA
Voltage - Collector Emitter Breakdown (Max)：150 V
Vce Saturation (Max) @ Ib, Ic：800mV @ 1mA, 10A
Current - Collector Cutoff (Max)：100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：70 @ 10mA, 5V
Power - Max：800 mW
Frequency - Transition：120MHz
Operating Temperature：150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 Long Body
Supplier Device Package：TO-92MOD
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2SA949-Y(JVC1,F,M)

2SA949-Y(JVC1,F,M)

Single Bipolar Transistors Overview

The Toshiba 2SA949 is a silicon PNP triple diffused transistor designed for driver-stage audio amplifier and high-voltage switching applications. It features a collector-emitter breakdown voltage of -150 V, a maximum collector current of -50 mA, and a collector power dissipation of 800 mW. The device exhibits a typical transition frequency of 120 MHz and a low output capacitance of 4.0 pF (maximum 5.0 pF). DC current gain ranges from 70 to 240 depending on the classification suffix.

Single Bipolar Transistors Feature Summary

High breakdown voltage capability for demanding switching environments
Low output capacitance suitable for high-frequency signal processing
High transition frequency optimized for audio amplifier driver stages

Single Bipolar Transistors Applications

Driver-stage audio amplifiers
High-voltage switching circuits

Single Bipolar Transistors Procurement Notes

Verify RoHS compatibility status by contacting the manufacturer or authorized distributor, as environmental compliance varies by production lot. Confirm the specific hFE classification suffix required for your circuit design, as gain ranges differ between standard and high-gain variants. Ensure the TO-92MOD package dimensions align with your PCB footprint requirements before finalizing procurement.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring high-voltage handling capabilities combined with high-speed switching performance. The 2SA949 is appropriate for applications needing a PNP transistor with a minimum -150 V collector-emitter rating. Consider the specific hFE binning requirements based on the application's gain stability needs, as the Y suffix indicates a higher gain range compared to the O suffix.

Single Bipolar Transistors Part Context

This component belongs to Toshiba's discrete semiconductor transistor portfolio, specifically engineered for general electronics applications. It utilizes a triple diffused silicon process technology to achieve its electrical characteristics. The device is housed in a JEDEC TO-92MOD plastic package, providing a compact form factor suitable for through-hole mounting on printed circuit boards.