2SA949-Y(T6JVC1,FM

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SA949-Y(T6JVC1,FM) is a silicon PNP triple diffused transistor designed for driver-stage audio amplifier and high-voltage switching applications. It features a collector-emitter voltage of −150 V and a maximum collector current of −50 mA. The device exhibits a typical transition frequency of 120 MHz and a low output capacitance of 4.0 pF. The Y suffix indicates a DC current gain (hFE) classification of 120 to 240 at −10 mA. It is housed in a JEDEC TO-92MOD package with a maximum power dissipation of 800 mW.

Single Bipolar Transistors Feature Summary

• High breakdown voltage capability suitable for demanding switching environments
• Low output capacitance supporting high-frequency signal processing
• High transition frequency optimized for driver-stage audio amplification

Single Bipolar Transistors Applications

• Driver-stage audio amplifiers
• High-voltage switching circuits

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix matches the required hFE binning and environmental compliance status. Confirm that the TO-92MOD package dimensions align with the target PCB footprint. Ensure the design accounts for the absolute maximum ratings regarding junction temperature and power dissipation derating curves provided in the official datasheet.

Single Bipolar Transistors Selection Notes

Select this component when high collector-emitter voltage and low parasitic capacitance are critical requirements. The specified hFE range ensures consistent gain performance for linear amplification stages. Consider the thermal management capabilities relative to the 800 mW power dissipation limit during continuous operation.

Single Bipolar Transistors Part Context

This part belongs to the 2SA series of PNP transistors manufactured by Toshiba Semiconductor and Storage. These devices utilize a triple diffused process to achieve superior electrical characteristics compared to standard epitaxial types. The series is widely recognized for reliability in consumer electronics and general-purpose industrial applications.

Single Bipolar Transistors Replacement Considerations

Cross-reference with other PNP transistors offering similar −150 V ratings and TO-92MOD packaging. Verify that substitute components meet or exceed the 120 MHz transition frequency and 4.0 pF output capacitance specifications to maintain circuit performance integrity.