2SA965-Y,T6F(J

Single Bipolar Transistors Overview

The Toshiba 2SA965-Y,T6F(J is a PNP silicon epitaxial transistor manufactured using the PCT process. It features a maximum collector-emitter voltage of -120 V and a continuous collector current rating of -800 mA. The device provides a DC current gain (hFE) ranging from 120 to 240, with a transition frequency of 120 MHz. It operates within a junction temperature range up to 150 °C and dissipates up to 900 mW of power. The component is housed in a JEDEC TO-92MOD package.

Single Bipolar Transistors Feature Summary

• Utilizes PCT process for high reliability
• High breakdown voltage capability
• Suitable for driver-stage amplification

Single Bipolar Transistors Applications

• Power amplifier applications
• Driver-stage amplifier applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official documentation to confirm environmental compliance status, such as RoHS compatibility. Confirm availability through authorized distributors, as this component may be subject to discontinuation or lifecycle changes. Ensure all design parameters remain within absolute maximum ratings to maintain product reliability.

Single Bipolar Transistors Selection Notes

Select this component for general electronics applications requiring high voltage handling and moderate current drive capabilities. It serves as a complementary match to the 2SC2235 NPN transistor. Evaluate thermal derating requirements carefully, as power dissipation decreases linearly with increasing ambient temperature.

Single Bipolar Transistors Part Context

This part belongs to the Toshiba 2SA965 series of PNP transistors designed for general-purpose amplification. The 'Y' suffix indicates a specific hFE classification range of 120 to 240. The 'T6F(J)' suffix denotes the specific packaging and marking configuration provided by the manufacturer.

Single Bipolar Transistors Replacement Considerations

The 2SC2235 is documented as the complementary NPN transistor for this device. Verify pinout compatibility and electrical characteristics when substituting with other PNP transistors in similar voltage and current ranges.

Single Bipolar Transistors FAQ

What is the DC current gain range for the Y suffix?

The Y suffix indicates an hFE range of 120 to 240 at IC = -100 mA and VCE = -5 V.

Is this transistor suitable for audio frequency amplification?

Yes, the datasheet lists it for power amplifier and driver-stage amplifier applications, which often include audio frequencies.

What is the maximum collector-base voltage?

The maximum collector-base voltage (VCBO) is -120 V.