2SA965-Y,T6KOJPF(J

Single Bipolar Transistors Overview

The Toshiba 2SA965 is a silicon PNP epitaxial planar transistor manufactured using the PCT process. It features a collector-base voltage of -120 V, a collector-emitter voltage of -120 V, and a maximum collector current of -800 mA. The device provides a DC current gain ranging from 80 to 240 depending on the hFE classification, with a transition frequency of 120 MHz. It operates within a junction temperature range up to 150 °C and dissipates up to 900 mW of power.

Single Bipolar Transistors Feature Summary

• Utilizes Toshiba's PCT (Planar Chip Transistor) epitaxial process for high reliability.
• Designed as a complementary pair to the 2SC2235 NPN transistor.
• Optimized for use in driver-stage amplifier applications.

Single Bipolar Transistors Applications

• Power amplifier circuits
• Driver-stage amplifiers

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official Toshiba documentation to confirm environmental compliance status, such as RoHS compatibility. Confirm that the component meets the required hFE binning specifications for your circuit design. Ensure all operating parameters remain within the absolute maximum ratings defined in the datasheet to maintain long-term reliability.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with a -120 V breakdown voltage and moderate current handling capability is required. Consider its complementary relationship with the 2SC2235 for push-pull configurations. Evaluate the thermal dissipation requirements against the 900 mW limit at ambient temperatures above 25 °C.

Single Bipolar Transistors Part Context

This component belongs to the family of general-purpose bipolar junction transistors produced by Toshiba Semiconductor and Storage. It is designed for small-signal to medium-power applications, specifically targeting audio and RF driver stages where high linearity and stability are necessary.

Single Bipolar Transistors Replacement Considerations

The 2SC2235 is documented as the complementary NPN counterpart. Verify pinout compatibility and electrical characteristics before substituting with other PNP transistors offering similar voltage and current ratings.

Single Bipolar Transistors FAQ

What is the hFE classification 'Y' for the 2SA965?

The 'Y' suffix indicates a DC current gain (hFE) range of 120 to 240 when tested at VCE = -5 V and IC = -100 mA.

Is the 2SA965 suitable for aerospace or medical equipment?

No. The datasheet explicitly prohibits use in unintended applications such as aerospace, medical equipment, or nuclear facilities due to reliability requirements.

What is the maximum collector-base voltage rating?

The absolute maximum rating for collector-base voltage (VCBO) is -120 V.