2SAR375PHZGT100R

Single Bipolar Transistors Overview

The 2SAR375PHZGT100R is a PNP silicon bipolar junction transistor manufactured by ROHM Semiconductor. It operates in an SOT-89-3 surface-mount package and is designed for middle power applications, including automotive use. Key electrical parameters include a maximum collector-emitter voltage of -120 V and a continuous collector current of -1.5 A. The device features a power dissipation rating of 2 W and a transition frequency of 280 MHz. DC current gain ranges from 120 to 390 at specified test conditions.

Single Bipolar Transistors Feature Summary

• Designed as a middle power transistor suitable for automotive environments
• Provides low saturation voltage characteristics for efficient switching
• Utilizes a compact SOT-89-3 surface-mount package for board space optimization

Single Bipolar Transistors Applications

• Automotive electronic circuits
• Low-frequency amplification stages
• Middle power driver applications

Single Bipolar Transistors Procurement Notes

Verify the specific suffix GT100R against official ROHM documentation to confirm reel packaging and automotive grade qualification. Ensure the component matches the required SOT-89-3 footprint and thermal specifications for the target design. Cross-reference the datasheet for exact hFE binning and VCE(sat) limits under intended operating currents.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with high voltage tolerance (-120 V) and moderate current handling (1.5 A) is required in a small outline package. The 2W power dissipation capability supports higher load currents compared to standard signal transistors. Verify that the application environment meets the specified temperature range and that the single configuration aligns with the circuit topology.

Single Bipolar Transistors Part Context

This part belongs to the 2SARx series of PNP transistors from ROHM Semiconductor. The series focuses on middle power devices optimized for reliability in demanding environments. The 2SAR375 variant specifically targets applications requiring robust voltage ratings within a compact SOT-89 form factor, distinguishing it from lower-power signal transistors or higher-current TO-243 packages.

Single Bipolar Transistors Replacement Considerations

The 2SAR375P5T100Q is a documented alternative within the same family. Note that while both are PNP -120V -1.5A devices, the 2SAR375P5T100Q has a lower power dissipation rating of 500 mW compared to the 2W rating of the 2SAR375PHZGT100R. Verify thermal management requirements before substitution.