Single Bipolar Transistors 2SARA41CHZGT116R product image

2SARA41CHZGT116R

$0.54
  • Description:TRANS PNP 120V 0.05A SST3
  • Series:-

SKU:52d73d151a3c Category: Brand:

  
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2SARA41CHZGT116R is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is TRANS PNP 120V 0.05A SST3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SARA41CHZGT116R

  • Description:TRANS PNP 120V 0.05A SST3
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):50 mA
  • Voltage - Collector Emitter Breakdown (Max):120 V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max):500nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:180 @ 2mA, 6V
  • Power - Max:200 mW
  • Frequency - Transition:140MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SST3
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SARA41CHZGT116R

2SARA41CHZGT116R

Single Bipolar Transistors Overview

The 2SARA41CHZGT116R is a PNP high-voltage amplifier transistor manufactured by ROHM Semiconductor. It operates in the SOT-23 (SST3) surface-mount package with a collector-emitter voltage (VCEO) of -120 V and a continuous collector current (IC) of -50 mA. The device features a DC current gain (hFE) ranging from 180 to 560, a transition frequency (fT) of 140 MHz, and a power dissipation rating of 200 mW on a reference land. It is designed for use in high-voltage amplifier applications.

Single Bipolar Transistors Feature Summary

  • High breakdown voltage capability rated at -120 V for collector-base and collector-emitter voltages.
  • Complements the NPN 2SCRC41C/2SC4102U3 transistor pair for matched circuit designs.
  • Classified DC current gain (hFE) ranks provide specific amplification ranges for design flexibility.

Single Bipolar Transistors Applications

  • High voltage amplifier circuits
  • General purpose discrete switching

Single Bipolar Transistors Procurement Notes

Verify the complete part number against official ROHM documentation to ensure correct suffix alignment. Confirm that the T116 tape-and-reel specification matches your automated assembly equipment requirements. Cross-reference the datasheet revision date to validate electrical characteristics before finalizing component selection.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor requires a minimum -120 V collector-emitter breakdown voltage within a compact SOT-23 footprint. Ensure the application current remains within the -50 mA limit and account for the 200 mW power dissipation derating based on ambient temperature conditions.

Single Bipolar Transistors Part Context

This component belongs to the 2SARA41C series of high-voltage bipolar junction transistors. It serves as the PNP counterpart to the 2SCRC41C NPN device, allowing for complementary push-pull or differential amplifier configurations in space-constrained PCB layouts.

Single Bipolar Transistors Replacement Considerations

The 2SA1579U3 is an electrically equivalent alternative packaged in SOT-323 (UMT3). Verify pinout compatibility and thermal performance differences between the SOT-23 and SOT-323 packages before substitution.

2SARA41CHZGT116R2SARA41CHZGT116R
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