2SB0709ASL

Single Bipolar Transistors Overview

The Panasonic 2SB0709A is a silicon PNP epitaxial planar transistor designed for general amplification. It serves as the complementary device to the 2SD0601A NPN transistor. The component utilizes a Mini3-G1 (SC-59) package, facilitating equipment downsizing and automated insertion via tape or magazine packing. Key electrical specifications include a collector-base voltage of -45 V, a collector-emitter voltage of -45 V, and an emitter-base voltage of -7 V. Maximum ratings specify a continuous collector current of -100 mA and a peak collector current of -200 mA. Power dissipation is rated at 200 mW with a junction temperature limit of 150 °C. The transition frequency reaches 80 MHz.

Single Bipolar Transistors Feature Summary

• High forward current transfer ratio (hFE) optimized for efficient signal amplification.
• Miniature SC-59 package design enables significant equipment size reduction.
• Compatible with automated assembly processes through tape and magazine packing formats.

Single Bipolar Transistors Applications

• General amplification circuits in office equipment
• Signal processing within communications equipment
• Amplification stages in measuring instruments
• Electronic circuitry in household appliances

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix (Q, R, S, or no-rank) against the required hFE gain classification before procurement. Confirm that the intended application aligns with standard electronic equipment usage, as the datasheet explicitly excludes aerospace, automotive, and life support systems. Ensure compliance with RoHS Directive EU 2002/95/EC requirements during integration.

Single Bipolar Transistors Selection Notes

Select this component when a compact PNP transistor is required for low-power general amplification tasks. The Mini3-G1 package is suitable for space-constrained designs requiring automated placement. Consider the complementary 2SD0601A if an NPN counterpart is needed for push-pull configurations. Verify that the -45 V voltage rating and 200 mW power dissipation meet the specific circuit demands.

Single Bipolar Transistors Part Context

This part belongs to the Panasonic Semiconductor discrete transistor lineup, specifically the silicon PNP epitaxial planar category. It is engineered for high-volume manufacturing environments where small form factors and consistent gain characteristics are prioritized. The product lifecycle status should be verified via official channels, as maintenance or discontinuation plans may affect long-term availability.

Single Bipolar Transistors Replacement Considerations

The 2SD0601A is documented as the complementary NPN device. Direct substitutes require matching the SC-59 package, -45 V voltage ratings, and comparable hFE ranges. Verify pinout compatibility and thermal characteristics before substitution.

Single Bipolar Transistors FAQ

What are the available hFE gain ranks for the 2SB0709A?

The component is classified into four ranks based on forward current transfer ratio: Rank Q (160 to 260), Rank R (210 to 340), Rank S (290 to 460), and No-rank (160 to 460).

Is the 2SB0709A suitable for automotive applications?

No. The datasheet explicitly states that the product is intended for standard applications such as office equipment and household appliances, excluding special applications like automobiles.

What is the maximum collector-emitter saturation voltage?

The maximum collector-emitter saturation voltage (VCE(sat)) is -0.5 V under conditions of IC = -100 mA and IB = -10 mA.