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2SB1072STR-E is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is DARLINGTON POWER TRANSISTOR. Review the specifications below when checking this part for your BOM.
Single Bipolar Transistors specifications for 2SB1072STR-E
- Description：DARLINGTON POWER TRANSISTOR
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- Transistor Type：-
- Current - Collector (Ic) (Max)：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Vce Saturation (Max) @ Ib, Ic：-
- Current - Collector Cutoff (Max)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Power - Max：-
- Frequency - Transition：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
Single Bipolar Transistors datasheet and documents for 2SB1072STR-E
Single Bipolar Transistors Overview
The 2SB1072STR-E is a Darlington power transistor manufactured by Renesas Electronics Corporation. It is classified as a Bipolar Junction Transistor (BJT) designed for high-power switching applications. The component utilizes a Darlington configuration to achieve high current gain, suitable for driving loads in various electronic circuits.
Single Bipolar Transistors Feature Summary
- Darlington power transistor architecture
- Bipolar junction transistor (BJT) technology
- High current gain capability
Single Bipolar Transistors Applications
- Power switching circuits
- Motor control systems
- Industrial automation equipment
Single Bipolar Transistors Procurement Notes
Verify the manufacturer datasheet for electrical characteristics and absolute maximum ratings before integration. Confirm package type and pinout compatibility with the target PCB layout. Ensure RoHS compliance status matches project requirements. Cross-reference part numbers to avoid counterfeit components from unauthorized distributors.
Single Bipolar Transistors Selection Notes
Select this component for applications requiring high current amplification via Darlington topology. Evaluate thermal management needs due to power dissipation characteristics. Compare against single BJT options if lower saturation voltage is critical. Consider package constraints for surface mount or through-hole implementation.
Single Bipolar Transistors Part Context
This part belongs to Renesas Electronics' discrete semiconductor portfolio. It complements their broader range of power transistors and integrated circuits used in industrial and consumer electronics. The product line focuses on reliable power switching solutions for embedded systems.
Single Bipolar Transistors Replacement Considerations
Consult official Renesas documentation for direct cross-references. Generic equivalents may differ in current handling or thermal performance. Verify pin compatibility and electrical parameters before substitution.
Explore related parts through Bipolar (BJT), Transistors, Discrete Semiconductor Products, all product categories.
