2SB1198KT146Q

Single Bipolar Transistors Overview

The 2SB1198KT146Q is a PNP silicon epitaxial planar transistor designed for low-frequency applications. It features a collector-emitter breakdown voltage of -80V and a maximum collector current of -0.5A. The device achieves a typical saturation voltage (VCE(sat)) of -0.2V at IC/IB = -0.5A/-50mA. Packaged in the SMT3 (TO-236) surface-mount format, it serves as a complementary component to the 2SD1782K NPN transistor.

Single Bipolar Transistors Feature Summary

• Low saturation voltage for efficient switching performance
• High breakdown voltage capability suitable for general-purpose circuits

Single Bipolar Transistors Applications

• Audio visual equipment
• Office automation equipment
• Communications devices
• Electronic toys

Single Bipolar Transistors Procurement Notes

Verify that the specific ordering suffix matches the required packaging configuration before procurement. Confirm RoHS compliance status aligns with project environmental standards. Ensure the component grade meets the reliability requirements for the intended non-automotive application scope.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with -80V rating and -0.5A current capacity is required. It is specifically chosen to complement the 2SD1782K in push-pull or driver configurations. Evaluate thermal dissipation limits within the SMT3 package constraints during circuit design.

Single Bipolar Transistors Part Context

This part belongs to ROHM's low-frequency bipolar transistor series. It utilizes an epitaxial planar structure on silicon substrate. The product line targets standard electronic equipment requiring high reliability and energy efficiency without automotive-grade certification.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SD1782K as its complementary pair. No other direct substitute part numbers are documented in the provided source material.