2SB1215S-TL-H

Single Bipolar Transistors Overview

The onsemi 2SB1215S-TL-H is a silicon PNP bipolar junction transistor (BJT) designed for high-current switching applications. It features a TO-251-3 surface-mount package and supports a maximum collector current of 3 A with a collector-emitter voltage rating of 100 V. The device exhibits a low collector-to-emitter saturation voltage, ensuring efficient operation in power circuits. Key electrical parameters include a collector-base voltage of 120 V, an emitter-base voltage of 6 V, and a gain-bandwidth product (fT) of 130 MHz. It operates at a maximum junction temperature of +150 °C with a power dissipation capability of 1 W.

Single Bipolar Transistors Feature Summary

• Low collector-to-emitter saturation voltage for efficient switching
• High transition frequency (fT) enabling fast switching speeds
• Excellent linearity of DC current gain (hFE)
• Small-sized package facilitating compact circuit designs

Single Bipolar Transistors Applications

• Relay drivers
• High-speed inverters
• General high-current switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'TL-H' against the official onsemi datasheet to confirm compliance with halogen-free requirements and tape-and-reel packaging specifications. Ensure the component matches the exact pinout and thermal characteristics defined in the TO-251-3 package documentation before integration into final assemblies.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring robust PNP switching capabilities within a compact surface-mount form factor. The 100 V rating and 3 A current capacity make it suitable for medium-power control circuits. Consider the thermal management requirements associated with the 1 W power dissipation limit when designing the PCB layout.

Single Bipolar Transistors Part Context

This part belongs to the 2SB1215 series of high-current switching transistors manufactured by onsemi. The series is characterized by its combination of high current handling and fast switching performance. The device is engineered to replace older through-hole components in modern surface-mount designs while maintaining reliable performance in demanding electronic environments.

Single Bipolar Transistors Replacement Considerations

Consult the official onsemi cross-reference documentation for verified substitute part numbers. Do not assume compatibility with generic PNP transistors without verifying pinout alignment and absolute maximum ratings.