2SB1241TV2Q

Single Bipolar Transistors Overview

The 2SB1241TV2Q is a PNP silicon epitaxial planar transistor manufactured by ROHM. It features a collector-emitter breakdown voltage of -80V and a continuous collector current rating of -1A. The device offers a minimum DC current gain (hFE) of 120, with transition frequencies reaching up to 390MHz under specific conditions. Packaged in the ATV through-hole format, it is designed for general-purpose switching applications.

Single Bipolar Transistors Feature Summary

• High breakdown voltage capability combined with high current handling capacity
• Linear DC current transfer ratio characteristics across operating ranges
• Low collector-emitter saturation voltage for efficient switching

Single Bipolar Transistors Applications

• General-purpose electronic equipment switching circuits
• Audio visual equipment signal processing
• Office automation equipment control interfaces

Single Bipolar Transistors Procurement Notes

Verify the exact ordering suffix against official ROHM documentation to confirm package type and tape-and-reel specifications. Ensure compatibility with existing PCB footprints for the ATV package. Confirm availability status as manufacturing schedules may change without notice.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring robust PNP switching with moderate voltage ratings. Compare hFE linearity requirements against the specified range. Consider thermal dissipation limits on standard printed circuit boards when designing the heat management strategy.

Single Bipolar Transistors Part Context

This part belongs to ROHM's power transistor lineup, complementing NPN counterparts like the 2SD1898 series. It utilizes an epitaxial planar structure for reliable performance in general-use consumer electronics and industrial control systems.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include the 2SB1260 and 2SB1181 from the same manufacturer family. Verify pinout configurations and specific electrical tolerances before implementation.