Single Bipolar Transistors 2SB1412TLP product image

2SB1412TLP

$0.33
  • Description:TRANS PNP 20V 5A CPT3
  • Series:-

SKU:5e816911d997 Category: Brand:

  
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2SB1412TLP is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is TRANS PNP 20V 5A CPT3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SB1412TLP

  • Description:TRANS PNP 20V 5A CPT3
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR)
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):5:00 AM
  • Voltage - Collector Emitter Breakdown (Max):20 V
  • Vce Saturation (Max) @ Ib, Ic:1V @ 100mA, 4A
  • Current - Collector Cutoff (Max):500nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:82 @ 500mA, 2V
  • Power - Max:1 W
  • Frequency - Transition:120MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package:CPT3
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SB1412TLP

2SB1412TLP

Single Bipolar Transistors Overview

The 2SB1412TLP is a PNP silicon epitaxial planar transistor designed for low-frequency applications. It features a collector-emitter voltage of -20V and a continuous collector current of -5A. The device offers a typical saturation voltage of -0.35V at -4A/-0.1A drive conditions. Electrical characteristics include a DC current gain range of 82 to 390, depending on the specific hFE classification suffix. Transition frequency reaches 60MHz, with power dissipation rated at 1W in surface-mount configurations.

Single Bipolar Transistors Feature Summary

  • Low collector-emitter saturation voltage for efficient switching performance
  • High DC current gain characteristics across varying collector currents
  • Epitaxial planar structure ensuring stable operation

Single Bipolar Transistors Applications

  • General-purpose low-frequency amplification circuits
  • Driver stages for power loads
  • Complementary pairing with NPN transistors such as the 2SD2098 series

Single Bipolar Transistors Procurement Notes

Verify the complete part number including the hFE binning suffix (e.g., TLR, TL) against the datasheet table to ensure correct gain classification. Confirm package type CPT3 matches the target footprint. Check RoHS compliance status and verify if the component is marked as Not Recommended for New Designs (NRND) before finalizing procurement plans.

Single Bipolar Transistors Selection Notes

Select this component when a robust PNP transistor with high current handling capability (-5A) and low saturation voltage is required. Ensure the application operates within the specified junction temperature limits and does not exceed the single-pulse collector current ratings. Verify that the required hFE bin aligns with the circuit's base drive requirements.

Single Bipolar Transistors Part Context

This component belongs to the Rohm 2SB1386/1412/1326 family of low-frequency transistors. These devices share similar electrical profiles but differ in packaging and specific hFE classifications. The 2SB1412 variant specifically utilizes the CPT3 package code, distinguishing it from other family members like the 2SB1386 which uses MPT3.

Single Bipolar Transistors Replacement Considerations

The 2SB1386 serves as a functional equivalent within the same product family, offering identical electrical specifications but utilizing a different package configuration.

2SB1412TLP2SB1412TLP
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