Single Bipolar Transistors 2SB1429_R1_00001 product image

2SB1429_R1_00001

$0.37
  • Description:TRANS PNP 20V 3A SOT-23
  • Series:-

SKU:a362ddb5547c Category: Brand:

  
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2SB1429_R1_00001 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Panjit International Inc.. Its product description is TRANS PNP 20V 3A SOT-23. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SB1429_R1_00001

  • Description:TRANS PNP 20V 3A SOT-23
  • Series:-
  • Mfr:Panjit International Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):3:00 AM
  • Voltage - Collector Emitter Breakdown (Max):20 V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 300mA, 3A
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 500mA, 2V
  • Power - Max:1.25 W
  • Frequency - Transition:160MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SB1429_R1_00001

2SB1429_R1_00001

Single Bipolar Transistors Overview

The Panjit 2SB1429 is a silicon PNP epitaxial transistor housed in an SOT-23 package. It supports a collector-base voltage of -20V and a continuous collector current of -3A. The device features a low saturation voltage of -300mV maximum at -3A/-300mA base drive. DC current gain ranges from 60 to 500 depending on the operating point. Transition frequency reaches 160MHz, with a power dissipation rating of 1.25W.

Single Bipolar Transistors Feature Summary

  • Low Vce(sat) performance for efficient switching
  • High collector current capability up to -3A
  • Excellent DC current gain characteristics
  • Halogen-free green molding compound

Single Bipolar Transistors Applications

  • General-purpose switching circuits
  • Driver stages for loads requiring high current
  • Logic level translation interfaces

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging type and reel specifications. Confirm RoHS compliance status and halogen-free material declarations prior to integration. Ensure thermal management aligns with the specified junction-to-ambient resistance limits during operation.

Single Bipolar Transistors Selection Notes

Select this component when low saturation voltage is critical for minimizing power loss in high-current paths. Evaluate the required DC current gain against the intended base drive conditions. Verify that the -20V voltage ratings accommodate the peak circuit voltages without exceeding breakdown limits.

Single Bipolar Transistors Part Context

This part belongs to the GPT-13TP series of bipolar junction transistors manufactured by Panjit International Inc. It utilizes a silicon PNP epitaxial construction designed for surface-mount assembly. The device is optimized for applications demanding reliable switching performance within compact form factors.

Single Bipolar Transistors Replacement Considerations

Consult official substitution lists for verified equivalents. Generic replacements may differ in saturation voltage or current handling capabilities.

2SB1429_R1_000012SB1429_R1_00001
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