2SB1457(T6DW,F,M)

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SB1457(T6DW,F,M) is a silicon PNP epitaxial type transistor configured as a Darlington pair. It features a collector-emitter voltage rating of -100 V and a continuous collector current capacity of -2 A. The device provides a minimum DC current gain (hFE) of 2000 at -1 A and maintains a maximum collector-emitter saturation voltage of -1.5 V under specified base drive conditions. With a transition frequency of 50 MHz, it supports switching applications in micro motor drives, hammer mechanisms, and power amplifiers.

Single Bipolar Transistors Feature Summary

• Darlington configuration delivering high DC current gain for efficient signal amplification
• Low saturation voltage characteristics to minimize power loss during conduction
• Robust collector current handling capability suitable for driving heavy loads

Single Bipolar Transistors Applications

• Micro motor drive circuits
• Hammer drive mechanisms
• Power amplifier stages

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against the manufacturer's documentation to confirm environmental compliance status, such as RoHS compatibility. Confirm package marking details and lot number identification requirements prior to procurement to ensure alignment with project specifications.

Single Bipolar Transistors Selection Notes

Select this component when high current gain and low saturation voltage are required for PNP switching or amplification tasks. Ensure the design accommodates the absolute maximum ratings, particularly regarding junction temperature limits and safe operating area constraints under varying thermal conditions.

Single Bipolar Transistors Part Context

This part belongs to the category of discrete bipolar junction transistors manufactured by Toshiba Semiconductor and Storage. It utilizes a JEDEC TO-92MOD package and is designed for general electronics applications, including office equipment and measuring instruments, while excluding unintended uses in safety-critical systems.

Single Bipolar Transistors Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

Single Bipolar Transistors FAQ

What is the minimum DC current gain specification?

The minimum DC current gain (hFE) is 2000, measured at a collector-emitter voltage of -2 V and a collector current of -1 A.

Is this transistor suitable for automotive safety applications?

No, the product documentation explicitly prohibits use in automotive transportation control equipment or other safety devices requiring extraordinarily high reliability.

What is the maximum collector-base voltage rating?

The absolute maximum rating for collector-base voltage (VCBO) is -100 V.