2SB1457(TE6,F,M)

Description：TRANS PNP 100V 2A TO-92MOD
Series：-

SKU:c5378997b40d Category: Single Bipolar Transistors Brand: Toshiba Semiconductor and Storage

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Product introduction

2SB1457(TE6,F,M) is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS PNP 100V 2A TO-92MOD. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SB1457(TE6,F,M)

Description：TRANS PNP 100V 2A TO-92MOD
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Bulk
Transistor Type：PNP
Current - Collector (Ic) (Max)：2:00 AM
Voltage - Collector Emitter Breakdown (Max)：100 V
Vce Saturation (Max) @ Ib, Ic：1.5V @ 1mA, 1A
Current - Collector Cutoff (Max)：10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：2000 @ 1A, 2V
Power - Max：900 mW
Frequency - Transition：50MHz
Operating Temperature：150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 Long Body
Supplier Device Package：TO-92MOD
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2SB1457(TE6,F,M)

2SB1457(TE6,F,M)

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SB1457(TE6,F,M) is a PNP epitaxial planar silicon Darlington transistor housed in a JEDEC TO-92MOD package. It features a maximum collector-emitter voltage of -100 V, a continuous DC collector current rating of -2 A, and a peak pulse collector current of -3 A. The device provides a minimum DC current gain (hFE) of 2000 at -1 A and maintains a low saturation voltage of -1.5 V max under specified conditions.

Single Bipolar Transistors Feature Summary

High DC current gain capability with a minimum hFE of 2000
Low collector-emitter saturation voltage for efficient switching
Epitaxial planar silicon construction for robust performance

Single Bipolar Transistors Applications

Micro motor drive circuits
Hammer drive applications
Power switching applications
Power amplifier applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix TE6,F,M against official Toshiba documentation to confirm environmental compliance status, such as RoHS compatibility, as indicated by lot number markings. Ensure that the procurement channel sources directly from authorized distributors or Toshiba representatives to guarantee authenticity and access to accurate reliability data sheets.

Single Bipolar Transistors Selection Notes

Select this component when high current gain and moderate voltage handling are required in a compact form factor. The TO-92MOD package limits power dissipation to 900 mW, necessitating careful thermal management. Verify that the application current does not exceed the -2 A DC limit and consider the transition frequency characteristics for signal integrity requirements.

Single Bipolar Transistors Part Context

This part belongs to the 2SB1457 series of PNP Darlington transistors manufactured by Toshiba Semiconductor and Storage. It is designed for general-purpose power switching and amplification tasks where high gain is critical. The device utilizes an epitaxial planar process to ensure stable electrical characteristics across the operating temperature range.

Single Bipolar Transistors Replacement Considerations

Consult official Toshiba documentation for verified equivalent parts. Cross-referencing should be performed carefully to match voltage ratings, current capabilities, and package dimensions.