2SC2235-Y,T6F(J

Single Bipolar Transistors Overview

The Toshiba 2SC2235 is a silicon NPN epitaxial transistor designed for audio power and driver stage amplifier applications. It features a collector-emitter breakdown voltage of 120 V, a maximum collector current of 800 mA, and a collector power dissipation of 900 mW at 25°C. The device exhibits a transition frequency of 120 MHz and a DC current gain ranging from 80 to 240 depending on the classification code. It utilizes a JEDEC TO-92MOD package with a junction temperature rating of 150 °C.

Single Bipolar Transistors Feature Summary

• Complementary pairing with the 2SA965 PNP transistor
• High-voltage capability suitable for demanding amplifier circuits
• Optimized transition frequency for audio signal processing

Single Bipolar Transistors Applications

• Audio power amplifier stages
• Driver stage amplifiers
• General-purpose switching circuits

Single Bipolar Transistors Procurement Notes

Verify RoHS compatibility status directly with Toshiba sales representatives, as environmental compliance varies by production lot. Confirm the specific hFE classification suffix (O or Y) required for your circuit design, as this dictates the minimum DC current gain threshold. Ensure the ordering part number matches the exact marking requirements for your assembly process.

Single Bipolar Transistors Selection Notes

Select the appropriate hFE binning code based on the required gain consistency for your amplifier topology. Evaluate the thermal management strategy carefully, as the 900 mW dissipation limit in the TO-92MOD package requires adequate heat sinking for continuous high-current operation. Verify that the 120 V breakdown voltage meets the peak voltage swings expected in the target application.

Single Bipolar Transistors Part Context

This component belongs to Toshiba's discrete bipolar transistor lineup utilizing the PCT (Process for Complementary Transistors) technology. This manufacturing process ensures matched electrical characteristics between complementary NPN and PNP devices, facilitating balanced push-pull configurations in audio output stages without requiring extensive external matching components.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SA965 as the complementary counterpart. No other direct substitute part numbers are documented within the provided official specifications.