Single Bipolar Transistors 2SC2235-Y(T6ND,AF product image

2SC2235-Y(T6ND,AF

  • Description:TRANS NPN 120V 0.8A TO-92MOD
  • Series:-

SKU:6ae1b0ec721e Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

2SC2235-Y(T6ND,AF is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS NPN 120V 0.8A TO-92MOD. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC2235-Y(T6ND,AF

  • Description:TRANS NPN 120V 0.8A TO-92MOD
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):800 mA
  • Voltage - Collector Emitter Breakdown (Max):120 V
  • Vce Saturation (Max) @ Ib, Ic:1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 100mA, 5V
  • Power - Max:900 mW
  • Frequency - Transition:120MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 Long Body
  • Supplier Device Package:TO-92MOD
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SC2235-Y(T6ND,AF

2SC2235-Y(T6ND,AF

Single Bipolar Transistors Overview

The Toshiba 2SC2235 is a silicon NPN epitaxial planar transistor designed for audio power and driver stage amplifier applications. It features a collector-emitter breakdown voltage of 120 V, a maximum collector current of 800 mA, and a collector power dissipation of 900 mW at 25°C. The device exhibits a transition frequency of 120 MHz and a DC current gain ranging from 80 to 240 depending on the classification code. Packaged in a JEDEC TO-92MOD format, it operates within a junction temperature range of -55°C to 150°C.

Single Bipolar Transistors Feature Summary

  • Complementary pairing with the 2SA965 PNP transistor
  • High breakdown voltage capability for robust operation
  • Optimized transition frequency for audio signal processing

Single Bipolar Transistors Applications

  • Audio power amplifier circuits
  • Driver stage amplifiers

Single Bipolar Transistors Procurement Notes

Verify RoHS compliance status directly with Toshiba sales representatives, as markings indicate compatibility variations. Confirm the specific hFE bin (O or Y) required for your circuit design against the datasheet specifications. Ensure the TO-92MOD package dimensions align with your PCB layout constraints before finalizing procurement.

Single Bipolar Transistors Selection Notes

Select this component when designing general electronics applications requiring high-voltage switching or audio amplification stages. Consider the complementary 2SA965 for push-pull configurations. Evaluate thermal derating requirements carefully, as power dissipation decreases significantly above ambient temperatures. Verify that the application does not fall under restricted unintended uses such as aerospace or medical equipment.

Single Bipolar Transistors Part Context

This component belongs to Toshiba's discrete semiconductor transistor lineup, specifically utilizing the PCT process technology. It serves as a standard NPN bipolar junction transistor suitable for consumer electronics, office equipment, and industrial measuring instruments where reliable audio amplification and switching are required.

Single Bipolar Transistors Replacement Considerations

The 2SA965 is documented as the complementary PNP counterpart. No other direct substitute part numbers are confirmed in the provided documentation.

2SC2235-Y(T6ND,AF2SC2235-Y(T6ND,AF

Click on the inquiry