2SC2235-Y(T6OMI,FM

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SC2235-Y(T6OMI,FM is a silicon NPN epitaxial transistor manufactured using the PCT process. It features a maximum collector-emitter voltage of 120 V and a continuous collector current rating of 800 mA. The device provides a typical transition frequency of 120 MHz and a maximum collector power dissipation of 900 mW. The 'Y' suffix indicates a DC current gain (hFE) classification range of 120 to 240 at 100 mA. It is housed in a JEDEC TO-92MOD package.

Single Bipolar Transistors Feature Summary

• Complementary pairing with the 2SA965 PNP transistor for push-pull configurations
• High-voltage capability suitable for demanding amplifier stages
• Optimized transition frequency for audio driver applications

Single Bipolar Transistors Applications

• Audio power amplifier circuits
• Driver stage amplifiers

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against the manufacturer's latest documentation to confirm environmental compliance status, such as RoHS compatibility, as indicated by lot number markings. Confirm that the component meets all absolute maximum ratings for your specific operating conditions before finalizing procurement.

Single Bipolar Transistors Selection Notes

Select this component when designing complementary pairs requiring high-voltage handling and moderate power dissipation. Ensure the required hFE bin matches the circuit design needs, as the Y suffix specifies a higher gain range compared to standard classifications. Verify thermal management requirements given the 900 mW dissipation limit in the specified package.

Single Bipolar Transistors Part Context

This component belongs to the 2SC2235 series of general-purpose NPN transistors designed for audio and driver applications. It utilizes Toshiba's PCT process technology to achieve stable performance characteristics. The device is intended for use in consumer electronics and general-purpose equipment where reliable amplification is required.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SA965 as the complementary counterpart. For direct replacement, verify that the substitute part matches the 120 V breakdown voltage, 800 mA current rating, and TO-92MOD package dimensions.

Single Bipolar Transistors FAQ

What does the 'Y' suffix indicate regarding the electrical characteristics?

The 'Y' suffix denotes a specific DC current gain (hFE) classification range of 120 to 240 when tested at a collector current of 100 mA and a collector-emitter voltage of 5 V.

Is this transistor suitable for high-frequency RF applications?

No, the device is specifically designed for audio power and driver stage amplifier applications, with a transition frequency optimized for those frequencies rather than high-frequency RF operations.