Single Bipolar Transistors 2SC2619FBTR-E product image

2SC2619FBTR-E

$0.14
  • Description:TRANS NPN 30V 0.1A 3-MPAK
  • Series:-

SKU:67f6fd22c2aa Category: Brand:

  
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2SC2619FBTR-E is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is TRANS NPN 30V 0.1A 3-MPAK. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC2619FBTR-E

  • Description:TRANS NPN 30V 0.1A 3-MPAK
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):30 V
  • Vce Saturation (Max) @ Ib, Ic:1.1V @ 1mA, 10mA
  • Current - Collector Cutoff (Max):500nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 2mA, 12V
  • Power - Max:150 mW
  • Frequency - Transition:230MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:3-MPAK
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SC2619FBTR-E

2SC2619FBTR-E

Single Bipolar Transistors Overview

The 2SC2619FBTR-E is an NPN silicon small signal transistor manufactured by Renesas Electronics Corporation. It is housed in a surface-mount MPAK-3 package, which corresponds to the R-PDSO-G3 form factor with three terminals. The device supports a maximum collector current of 0.1 A and a collector-emitter voltage rating of 30 V. It features a minimum DC current gain (hFE) of 60. The component is designed for high-frequency amplifier applications.

Single Bipolar Transistors Feature Summary

  • NPN silicon epitaxial construction optimized for small signal operations
  • Surface-mount MPAK-3 package design for automated assembly
  • High-frequency performance characteristics suitable for RF applications

Single Bipolar Transistors Applications

  • High frequency amplifier circuits
  • RF small signal processing
  • General purpose amplification

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'E' against official Renesas documentation to confirm if it denotes a specific tape-and-reel variant or environmental compliance status distinct from the standard FBTR designation. Ensure the ordering code matches the exact datasheet revision REJ03G0703-0200 or subsequent updates to guarantee correct pinout and electrical parameters.

Single Bipolar Transistors Selection Notes

Select this component when a compact NPN transistor with a 30V collector-emitter voltage rating and 100mA continuous current capability is required. The MPAK-3 package offers a low-profile solution for space-constrained designs. Consider the minimum hFE of 60 for biasing requirements in amplifier stages where moderate gain is sufficient.

Single Bipolar Transistors Part Context

This part belongs to the 2SC2619 series of silicon NPN transistors produced by Renesas. The series includes variants such as the 2SC2619FC, which shares similar electrical ratings but may differ in transition frequency specifications. The FBTR suffix typically indicates a specific packaging configuration within the broader product family.

Single Bipolar Transistors Replacement Considerations

Cross-reference with other 2SC2619 variants like the 2SC2619FC if transition frequency differences are acceptable. Verify that substitute components maintain the same MPAK-3 footprint and pinout configuration to ensure mechanical compatibility without PCB redesign.

2SC2619FBTR-E2SC2619FBTR-E
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