2SC2620QBTR-E

$0.15

Description：RF SMALL SIGNAL BIPOLAR TRANSIST
Series：*

SKU:5823b437cef3 Category: Bipolar RF Transistors Brand: Renesas Electronics Corporation

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Product introduction

Product Detailed Parameters

Description：RF SMALL SIGNAL BIPOLAR TRANSIST
Series：*
Mfr：Renesas Electronics Corporation
Package：Bulk
Transistor Type：-
Voltage - Collector Emitter Breakdown (Max)：-
Frequency - Transition：-
Noise Figure (dB Typ @ f)：-
Gain：-
Power - Max：-
DC Current Gain (hFE) (Min) @ Ic, Vce：-
Current - Collector (Ic) (Max)：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

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2SC2620QBTR-E

Overview

The 2SC2620QBTR-E is an NPN silicon RF small signal transistor manufactured by Renesas Electronics Corporation. It is designed for high-frequency amplifier applications, featuring a nominal transition frequency (fT) of 940 MHz. The device supports a maximum collector current (IC) of 0.02 A and a collector-emitter breakdown voltage (VCEO) of 20 V. It exhibits a low collector capacitance of 1.2 pF, making it suitable for VHF band operations. The component is housed in a surface-mount SOT-353 package with three gull-wing terminals.

Feature Summary

Optimized for VHF band RF amplification
High transition frequency for signal integrity
Low parasitic capacitance for high-speed performance

Applications

VHF band radio frequency amplifiers
Small signal RF circuits
Wireless communication equipment front-ends

Procurement Notes

Verify the specific suffix 'TR-E' against official Renesas documentation to confirm tape-and-reel packaging specifications. Ensure the part number matches the exact electrical characteristics required for your design, as minor suffix variations can indicate different packaging or testing criteria. Cross-reference with the latest datasheet revision to confirm compliance with current standards.

Selection Notes

Select this component when designing VHF amplifiers requiring an NPN silicon transistor with a transition frequency near 940 MHz. The 20 V collector-emitter voltage rating suits low-voltage RF stages. Consider the SOT-353 package constraints for PCB layout and thermal management in compact wireless devices.

Part Context

This transistor belongs to the 2SC2620 series of RF small signal transistors from Renesas. The base model 2SC2620QB defines the core electrical parameters, while the 'TR-E' suffix typically denotes the specific reel packaging format used for automated surface-mount assembly processes.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Verify compatibility with alternative NPN RF transistors having similar fT and VCEO ratings through independent technical comparison.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

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Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

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Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.