2SC2705-O(TPE6,F)

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SC2705-O(TPE6,F) is a silicon NPN epitaxial planar transistor utilizing the PCT process, designed for audio frequency amplifier applications. It features a JEDEC TO-92MOD package with a maximum collector-emitter voltage of 150 V and a collector current rating of 50 mA. The device offers a typical transition frequency of 200 MHz and a low collector output capacitance of 1.8 pF. DC current gain ranges from 80 to 240 depending on classification.

Single Bipolar Transistors Feature Summary

• Engineered for audio frequency amplifier applications using a silicon NPN epitaxial structure.
• Provides high transition frequency characteristics suitable for signal amplification.
• Features small collector output capacitance to support efficient signal processing.
• Designed as a complementary component to the 2SA1145 PNP transistor.

Single Bipolar Transistors Applications

• Audio frequency amplifier circuits
• General electronics applications including computers and office equipment
• Home electronics appliances

Single Bipolar Transistors Procurement Notes

Verify RoHS compatibility status directly with Toshiba sales representatives, as markings indicate specific environmental compliance variations. Confirm the hFE binning classification (O or Y) required for your design specifications. Ensure the ordering suffix matches the exact tape and reel packaging requirements specified in the procurement order.

Single Bipolar Transistors Selection Notes

Select this component when designing audio frequency amplifiers requiring a 150 V collector-emitter breakdown voltage and a 50 mA continuous collector current capability. Consider the 200 MHz transition frequency for high-speed signal handling within audio bands. Verify that the TO-92MOD package dimensions fit the available PCB space and thermal dissipation requirements for the target application environment.

Single Bipolar Transistors Part Context

This component belongs to the family of silicon NPN epitaxial transistors manufactured by Toshiba Semiconductor and Storage. It utilizes the proprietary PCT process to achieve specific electrical performance metrics. The device is part of a complementary pair system, specifically matched electrically with the 2SA1145 PNP transistor for balanced circuit designs.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SA1145 as the complementary counterpart. No other direct substitute part numbers are documented in the provided source material.

Single Bipolar Transistors FAQ

What is the typical transition frequency of the 2SC2705?

The typical transition frequency (fT) is 200 MHz under test conditions of VCE = 5 V and IC = 10 mA.

How is the DC current gain classified?

The DC current gain (hFE) is classified into two bins: O (80 to 160) and Y (120 to 240), measured at VCE = 5 V and IC = 10 mA.

Is this transistor intended for use in aerospace or medical equipment?

No. The product is not intended for unintended uses such as aerospace, medical equipment, or nuclear facilities unless specifically permitted by Toshiba.