2SC2859-GR(TE85L,F

Single Bipolar Transistors Overview

The 2SC2859-GR(TE85L,F is an NPN bipolar junction transistor manufactured by Toshiba Semiconductor and Storage. It features a collector-emitter breakdown voltage of 30 V and a maximum continuous collector current of 500 mA. The device is designed for switching and amplification applications within compact electronic circuits. It operates with a maximum power dissipation of 150 mW and supports a junction temperature up to 125°C. The component utilizes the S-Mini package, identified as TO-236-3, SC-59, or SOT-23-3, facilitating surface mount installation on printed circuit boards.

Single Bipolar Transistors Feature Summary

• NPN bipolar junction transistor configuration optimized for general-purpose switching and linear amplification tasks
• Compact S-Mini surface mount footprint enabling high-density board layout in space-constrained designs
• Robust thermal performance supporting operation at elevated junction temperatures up to 125°C

Single Bipolar Transistors Applications

• General-purpose signal amplification in consumer electronics
• Low-power switching circuits in portable devices
• Driver stages for small-signal loads in industrial control modules

Single Bipolar Transistors Procurement Notes

Verify the specific suffix GR(TE85L,F against the original design specification to ensure compatibility with existing PCB footprints and assembly processes. Confirm RoHS compliance status if environmental regulations apply to the final product. Cross-reference the manufacturer part number with authorized distributors to avoid counterfeit components. Ensure storage conditions meet moisture sensitivity level requirements prior to soldering.

Single Bipolar Transistors Selection Notes

Select this component when a low-voltage NPN transistor is required for compact switching or amplification roles. The 30 V rating suits low-power DC applications, while the 500 mA current capacity handles moderate load demands. Consider the S-Mini package constraints regarding thermal dissipation limits of 150 mW during selection. Evaluate alternative packages if higher power handling or different pin configurations are necessary for the system architecture.

Single Bipolar Transistors Part Context

This transistor belongs to Toshiba's lineup of small-signal NPN BJTs intended for modern surface mount manufacturing. The S-Mini package represents a trend toward miniaturization in discrete semiconductor devices. It serves as a fundamental active element in analog and digital circuits where space efficiency and reliable switching characteristics are prioritized over high-power handling capabilities.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Verify functional equivalence with generic SOT-23 NPN transistors only if electrical parameters match exactly. Consult Toshiba official resources for direct replacements.