2SC3279-M-AP

Single Bipolar Transistors Overview

The 2SC3279-M-AP is an NPN silicon epitaxial transistor manufactured by Micro Commercial Components (MCC). It features a TO-92 package and RoHS compliance. Key electrical parameters include a collector-emitter voltage of 10 V, a DC collector current of 2.0 A, and a pulsed current of 5.0 A. The device offers a high DC current gain (hFE) range of 200 to 330 at IC=0.5A and VCE=1.0V. Maximum ratings specify a collector power dissipation of 750 mW and a junction temperature range from -55°C to +150°C.

Single Bipolar Transistors Feature Summary

• High DC current gain with excellent linearity characteristics
• Lead-free finish compliant with RoHS standards
• Epoxy material meets UL 94 V-0 flammability rating

Single Bipolar Transistors Applications

• General-purpose amplification circuits
• Switching applications requiring moderate current handling
• Low-voltage signal processing stages

Single Bipolar Transistors Procurement Notes

Verify the specific suffix designation when ordering to ensure correct packaging and environmental compliance. The '-AP' suffix indicates ammo packing containing 20,000 pieces per carton. Confirm that the 'M' bin selection matches the required hFE gain range for your design. Purchase only from authorized distributors to guarantee genuine parts and full traceability as per manufacturer guidelines.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring an NPN transistor with a 10 V collector-emitter breakdown voltage and up to 2.0 A continuous current capability. The 'M' classification provides a typical hFE of 200, suitable for standard amplification needs. Ensure the thermal management strategy supports the 750 mW power dissipation limit within the specified operating temperature range.

Single Bipolar Transistors Part Context

This part belongs to the 2SC3279 series of NPN silicon epitaxial transistors produced by Micro Commercial Components. The series includes variants distinguished by gain bins (L, M, N, P) and packaging options. The TO-92 plastic package is designed for through-hole mounting, providing a compact solution for general electronic applications.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include other 2SC3279 variants such as 2SC3279-L, 2SC3279-N, or 2SC3279-P, which share identical electrical specifications but differ in DC current gain classifications. Verify pinout compatibility and package dimensions when considering alternative manufacturers.

Single Bipolar Transistors FAQ

What is the DC current gain range for the 2SC3279-M variant?

The 2SC3279-M variant has a DC current gain (hFE) range of 200 to 330, measured at IC=0.5A and VCE=1.0V.

Does the 2SC3279-M-AP support halogen-free requirements?

Standard units are RoHS compliant. Halogen-free versions are available upon request by adding the '-HF' suffix to the part number.

What is the maximum collector-emitter voltage?

The maximum collector-emitter voltage (VCEO) is rated at 10 Vdc.