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2SC3284 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Sanken Electric USA Inc.. Its product description is TRANS NPN 150V 14A TO-3P. Review the specifications below when checking this part for your BOM.
The Sanken Electric USA Inc. 2SC3284 is a Silicon NPN Epitaxial Planar Transistor designed for audio and general-purpose applications, serving as the complement to the 2SA1303 PNP type. It features a maximum collector current of 14 A and a collector-emitter voltage rating of 150 V. The device operates with a maximum power dissipation of 125 W at a case temperature of 25°C and supports junction temperatures up to 150°C. Key electrical characteristics include a minimum DC current gain (hFE) of 50 under specified conditions and a typical transition frequency (fT) of 60 MHz.
Verify the specific hFE rank suffix (O, P, or Y) required for your design, as these indicate different gain ranges. Confirm that the MT-100 (TO-3P) package dimensions match your thermal management and mounting constraints. Ensure sourcing from authorized channels to guarantee original Sanken Electric manufacturing quality and datasheet accuracy.
Select this component when a high-current NPN transistor is needed to pair with the 2SA1303 in push-pull configurations. Consider the 150 V breakdown voltage and 14 A current capacity for robust performance in audio power stages. Evaluate the thermal resistance characteristics if operating without an infinite heatsink or under natural cooling conditions.
This transistor belongs to Sanken's lineup of silicon epitaxial planar devices intended for audio and general-purpose use. It is engineered to provide matched characteristics when used alongside its PNP counterpart, the 2SA1303, ensuring balanced performance in complementary symmetry circuits commonly found in consumer audio equipment.
The 2SC3284 is explicitly documented as the complement to the 2SA1303. When replacing, ensure the substitute matches the MT-100 (TO-3P) package and meets the 150 V / 14 A ratings. Verify hFE gain binning compatibility if precise matching with the PNP side is required for low distortion.
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