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The CEL 2SC3357-T1-A is a silicon NPN RF small signal bipolar transistor designed for ultra-high frequency applications. It operates in the VHF, UHF, and CATV bands with a maximum operating frequency of 6.5 GHz. The device features a typical noise figure of 1.8 dB and a typical power gain of 9.0 dB at 1.0 GHz under standard bias conditions. It supports a maximum collector current of 100 mA and a collector-emitter voltage of 12 V. The component is housed in a compact SOT-89 (Package Code 34) surface-mount package.
Verify the specific ordering suffix against official manufacturer documentation to confirm exact packaging and tape specifications. Ensure compatibility with existing supply chain requirements by cross-referencing the part number with authorized distributor catalogs. Confirm RoHS compliance status through the latest datasheet revision before finalizing procurement orders.
Select this component when designing circuits requiring low noise figures around 1.8 dB at 1.0 GHz. The SOT-89 package provides a balance between thermal dissipation and board space efficiency. Consider the 12 V collector-emitter voltage rating for appropriate biasing networks in high-frequency amplifier topologies.
This component belongs to the Silicon Bipolar Transistors category within the CEL product portfolio. It serves as a discrete solution for RF amplification tasks where integrated MMICs may not be suitable. The device complements other single transistors like the NE85634, which shares similar JEITA equivalent designations and application scopes.
The NE85634 is listed as a JEITA equivalent part number for the 2SC3357 series. Verify pinout compatibility and electrical parameter tolerances before substituting. Consult official replacement guides to ensure functional equivalence in high-frequency circuit designs.