2SC3380ASTR-E

Single Bipolar Transistors Overview

The Renesas 2SC3380ASTR-E is a silicon NPN triple diffused transistor designed for high-frequency and high-voltage applications. It operates with a collector-to-emitter voltage of 300 V and a collector current of 100 mA. The device features a gain bandwidth product of 80 MHz, making it suitable for RF amplification. Packaged in the UPAK format, it provides efficient thermal management for power dissipation up to 1 W on an alumina ceramic board.

Single Bipolar Transistors Feature Summary

• Triple diffused silicon NPN construction
• High frequency operation capability
• High voltage handling capacity
• Integrated flange for heat dissipation

Single Bipolar Transistors Applications

• High frequency high voltage amplifier
• High voltage switch

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix 'ASTR-E' against the manufacturer's latest documentation to confirm shipping container details and emboss taping specifications. Confirm that the component meets the required quality grade for the intended application environment before finalizing procurement.

Single Bipolar Transistors Selection Notes

Select this component when circuit designs require a single NPN transistor capable of handling 300 V collector-to-emitter voltage and 100 mA collector current. Ensure the design accommodates the UPAK package dimensions and utilizes appropriate heat sinking methods to maintain junction temperature within specified limits during operation.

Single Bipolar Transistors Part Context

This part belongs to the Renesas 2SC3380 series of silicon NPN transistors. It is manufactured using triple diffused technology to ensure reliability in demanding electronic environments. The component is distributed by authorized channels under the Renesas Electronics brand following corporate mergers.

Single Bipolar Transistors Replacement Considerations

Consult official Renesas documentation or contact sales offices to identify verified substitute part numbers. Do not assume cross-compatibility with other manufacturers without verifying electrical characteristics and pin configurations.