SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The onsemi 2SC3395-TB-E is a pre-biased NPN bipolar junction transistor designed for switching and amplification applications. It integrates internal bias resistors to simplify circuit design and reduce component count. The device features a collector-emitter breakdown voltage of 50V and a maximum continuous collector current of 0.1A. This configuration ensures reliable performance in low-power digital logic interfaces and signal processing tasks within compact electronic systems.
Verify the manufacturer part number against official onsemi documentation to confirm authenticity. Ensure the ordering suffix matches the required tape and reel or bulk packaging specifications. Cross-reference electrical parameters with the latest datasheet to guarantee compatibility with target circuit designs before procurement.
Select this component when a compact NPN solution with integrated biasing is required. Consider the 50V breakdown voltage and 0.1A current limits against load requirements. Evaluate thermal management needs based on expected duty cycles and ambient operating conditions to ensure long-term stability.
This part belongs to the family of pre-biased single transistors offered by onsemi. These components are engineered to replace discrete resistor-transistor networks, offering space savings and improved consistency in manufacturing processes. They are commonly utilized in portable electronics and automotive control modules where board real estate is limited.
Consult the official cross-reference guide for verified substitutes. Ensure replacement parts match the NPN configuration, voltage ratings, and package dimensions. Verify that any alternative maintains equivalent bias resistor values to preserve original circuit functionality.