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The onsemi 2SC3399-AC is a silicon NPN bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. It features a collector-emitter voltage rating of 160 V and a continuous collector current capacity of 700 mA. The device operates within a temperature range of -55°C to +150°C and is housed in a TO-92-3 through-hole package. Key electrical characteristics include a DC current gain (hFE) ranging from 40 to 400, a transition frequency (fT) of 120 MHz, and a power dissipation capability of 700 mW. These specifications define its suitability for low-power signal processing and control circuits.
Verify the specific suffix AC against the manufacturer's official datasheet to confirm pinout configuration and binning standards. Check for obsolescence status as component lifecycles change. Ensure the supplier provides traceable documentation matching the exact part number to avoid counterfeit risks. Confirm RoHS compliance requirements align with project specifications before finalizing procurement orders.
Select this component when a robust NPN transistor with 160V breakdown voltage is required in a compact TO-92 package. Compare hFE bins if precise gain control is necessary for amplifier designs. Consider the 700mA limit for load calculations. Evaluate thermal management needs given the 700mW dissipation rating in enclosed spaces.
The 2SC3399 series belongs to onsemi's portfolio of small-signal bipolar transistors. This family is widely used in industrial and consumer applications requiring reliable switching performance. The 2SC3399-AC variant specifically denotes a particular manufacturing lot or grading standard within the broader 2SC3399 product line, maintaining compatibility with standard NPN circuit topologies.
Publicly confirmed direct substitutes are not available in the provided data. Verify equivalent parts such as the 2SC3332S or similar NPN transistors with comparable VCEO and IC ratings by consulting official cross-reference guides.