2SC3503FSTU

Single Bipolar Transistors Overview

The onsemi 2SC3503FSTU is an NPN epitaxial silicon transistor housed in a TO-126 package. It features a collector-emitter breakdown voltage of 300V and a continuous collector current rating of 100mA. The device offers a DC current gain (hFE) range of 160 to 320, classifying it as F grade. Key electrical parameters include a transition frequency of 150MHz, a reverse transfer capacitance of 1.8pF at VCB=30V, and a maximum power dissipation of 7W at 25°C case temperature.

Single Bipolar Transistors Feature Summary

• High voltage capability with 300V collector-emitter breakdown
• Low reverse transfer capacitance for reduced signal feedback
• Excellent gain linearity designed for low total harmonic distortion
• High-frequency operation up to 150MHz

Single Bipolar Transistors Applications

• Audio amplification circuits
• Voltage amplifier stages
• Current source implementations
• CRT display and video output drivers
• General-purpose amplification tasks

Single Bipolar Transistors Procurement Notes

Verify the specific F-grade hFE classification (160–320) against circuit requirements before procurement. Confirm that the TO-126 through-hole package aligns with the target PCB layout. Ensure thermal management strategies account for the 7W dissipation limit at 25°C case temperature. Check for RoHS compliance status if environmental regulations apply to the final assembly.

Single Bipolar Transistors Selection Notes

Select this component when high-voltage handling and precise gain linearity are required. The F-grade binning ensures a minimum hFE of 160, suitable for applications demanding consistent amplification without excessive base drive current. Consider the 150MHz bandwidth for audio or intermediate frequency applications where low distortion is critical.

Single Bipolar Transistors Part Context

This part belongs to the 2SC3503/KSC3503 family of NPN epitaxial silicon transistors originally developed by Fairchild Semiconductor. The 'F' suffix specifically denotes the DC current gain binning range. The device serves as a complement to the PNP 2SA1381/KSA1381 transistor, facilitating push-pull configurations in amplifier designs.

Single Bipolar Transistors Replacement Considerations

Direct substitutes within the same family include 2SC3503CSTU, 2SC3503DSTU, and 2SC3503ESTU, which differ only in their hFE gain ranges. Verify that any replacement maintains the required gain linearity and voltage ratings for the specific application context.