Single Bipolar Transistors 2SC3568-AZ product image

2SC3568-AZ

$2.01
  • Description:TRANS NPN 100V 10A TO-220F
  • Series:-

SKU:a677965a66bf Category: Brand:

  
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2SC3568-AZ is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is TRANS NPN 100V 10A TO-220F. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC3568-AZ

  • Description:TRANS NPN 100V 10A TO-220F
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):10:00 AM
  • Voltage - Collector Emitter Breakdown (Max):100 V
  • Vce Saturation (Max) @ Ib, Ic:600mV @ 500mA, 5A
  • Current - Collector Cutoff (Max):10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 3A, 5V
  • Power - Max:30 W
  • Frequency - Transition:-
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3 Full Pack
  • Supplier Device Package:TO-220F
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SC3568-AZ

2SC3568-AZ

Single Bipolar Transistors Overview

The Renesas 2SC3568-AZ is an NPN silicon epitaxial bipolar junction transistor designed for high-power applications. It features a collector-emitter voltage rating of 100 V and a continuous collector current capacity of 10 A. The device dissipates up to 30 W of power in a TO-220F through-hole package. Key electrical characteristics include a saturation voltage (Vce(sat)) of 0.6 V at rated conditions. It operates reliably at temperatures up to 175°C, making it suitable for demanding environments.

Single Bipolar Transistors Feature Summary

  • High thermal stability supporting operation at elevated temperatures up to 175°C
  • Low saturation voltage for efficient power switching performance
  • Robust construction for high-current handling in discrete semiconductor form

Single Bipolar Transistors Applications

  • Switching regulators
  • DC-DC converters
  • High frequency power amplifiers

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official Renesas documentation to confirm exact mechanical and electrical specifications. Ensure compatibility with existing thermal management designs due to the 30 W dissipation rating. Confirm lead compliance status if required by project regulations. Cross-reference datasheet parameters for Vce(sat) and hFE ranges before final integration.

Single Bipolar Transistors Selection Notes

Select this component for circuits requiring high current switching capabilities within a 100 V limit. The TO-220F package facilitates effective heat dissipation for power applications. Consider the low saturation voltage for minimizing conduction losses. Evaluate thermal resistance requirements based on the 175°C maximum operating temperature specification.

Single Bipolar Transistors Part Context

This NPN power transistor belongs to Renesas' discrete bipolar transistor portfolio. It is engineered for robust performance in power electronics. The device utilizes silicon epitaxial technology for reliable switching. It serves as a critical component in modern power conversion systems.

Single Bipolar Transistors Replacement Considerations

Consult official Renesas substitution guides for verified equivalents. Ensure replacement parts match the 10 A current and 100 V voltage ratings. Verify package compatibility and thermal characteristics for direct interchangeability.

2SC3568-AZ2SC3568-AZ
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