2SC3576

Single Bipolar Transistors Overview

The 2SC3576 is an NPN epitaxial planar silicon transistor manufactured by onsemi. It is designed for high-hFE and low-frequency general-purpose amplifier applications. The device features a collector current rating of 200 mA and a collector-emitter voltage of 50 V. It operates with a transition frequency of 250 MHz and has a maximum power dissipation of 250 mW. The component is housed in a through-hole 3-SPA package, suitable for standard PCB mounting configurations requiring reliable switching and amplification performance.

Single Bipolar Transistors Feature Summary

• High DC current gain optimized for low-frequency general-purpose amplifier circuits
• NPN epitaxial planar silicon construction ensuring stable switching characteristics
• Integrated design supporting driver applications with moderate power handling capabilities

Single Bipolar Transistors Applications

• Low-frequency general-purpose amplifiers
• Various driver circuits
• Switching applications in consumer electronics

Single Bipolar Transistors Procurement Notes

Verify the manufacturer origin carefully, as the 2SC3576 part number is historically associated with Sanyo Semicon Device. Ensure that the specific unit received matches the onsemi specification sheet provided. Confirm package type and pinout compatibility before integration into existing designs to avoid electrical mismatches or mechanical fit issues during assembly processes.

Single Bipolar Transistors Selection Notes

Select this component when high hFE is required for low-frequency signal amplification tasks. The 200 mA collector current limit defines its suitability for small-signal driving roles rather than high-power industrial loads. Evaluate thermal management requirements based on the 250 mW power dissipation rating to ensure reliable operation within the specified temperature range for the intended application environment.

Single Bipolar Transistors Part Context

This transistor belongs to the category of single bipolar junction transistors (BJTs) intended for discrete semiconductor applications. It serves as a fundamental active component in analog and digital circuit designs where moderate gain and switching speed are necessary. The 3-SPA package indicates a specific through-hole form factor distinct from surface-mount alternatives, influencing board layout strategies.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Cross-referencing with equivalent specifications from other manufacturers requires independent verification of electrical parameters and pinout compatibility to ensure functional equivalence in the target circuit design.