Single Bipolar Transistors 2SC3596E product image

2SC3596E

$0.59
  • Description:TRANS NPN 60V 0.3A TO-126
  • Series:-

SKU:4e5705354a7c Category: Brand:

  
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2SC3596E is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 60V 0.3A TO-126. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC3596E

  • Description:TRANS NPN 60V 0.3A TO-126
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):300 mA
  • Voltage - Collector Emitter Breakdown (Max):60 V
  • Vce Saturation (Max) @ Ib, Ic:600mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 50mA, 10V
  • Power - Max:1.2 W
  • Frequency - Transition:700MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-225AA, TO-126-3
  • Supplier Device Package:TO-126
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SC3596E

2SC3596E

Single Bipolar Transistors Overview

The onsemi 2SC3596E is an NPN single bipolar junction transistor designed for high-frequency applications. It features a maximum collector current of 300 mA and a collector-emitter breakdown voltage of 60 V. The device supports a transition frequency of 700 MHz and can dissipate up to 1.2 W of power. It operates within a junction temperature range of up to 150°C and utilizes a TO-225AA (TO-126-3) through-hole package.

Single Bipolar Transistors Feature Summary

  • NPN configuration optimized for high-frequency signal processing
  • Capable of handling 300 mA collector current with 60 V breakdown rating
  • Designed for efficient thermal management in through-hole mounting

Single Bipolar Transistors Applications

  • High-frequency amplifier circuits
  • RF signal processing stages
  • General-purpose switching applications requiring moderate power dissipation

Single Bipolar Transistors Procurement Notes

Verify the manufacturer part number against official onsemi documentation to ensure authenticity. Confirm that the component matches the specified TO-126-3 package style and electrical ratings. Check for any specific ordering suffixes that may indicate variations in packaging or testing criteria, as these details are critical for compatibility and performance assurance.

Single Bipolar Transistors Selection Notes

Select this component when circuit design requires an NPN transistor with a 700 MHz transition frequency and 60 V collector-emitter voltage. Ensure the application demands a maximum collector current of 300 mA and allows for through-hole mounting. Consider the 1.2 W power dissipation capability and 150°C operating temperature limit during thermal analysis.

Single Bipolar Transistors Part Context

This part belongs to the family of single bipolar transistors manufactured by onsemi. It is categorized under discrete semiconductor products specifically designed for general-purpose and high-frequency uses. The component is distinct from other variants in the series by its specific voltage, current, and frequency ratings defined in the official datasheet.

Single Bipolar Transistors Replacement Considerations

Consult official cross-reference lists for verified substitutes. Ensure replacement parts match the NPN type, TO-126-3 package, and key electrical parameters such as 60V Vceo and 700MHz fT.

Single Bipolar Transistors FAQ

What is the maximum collector current for the 2SC3596E?

The maximum collector current is 300 mA.

Is the 2SC3596E suitable for high-frequency applications?

Yes, it has a transition frequency of 700 MHz, making it suitable for high-frequency use.

2SC3596E2SC3596E
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