2SC3647S-TD-E

Single Bipolar Transistors Overview

The onsemi 2SC3647S-TD-E is an NPN single bipolar junction transistor (BJT) housed in a PCP surface-mount package. It features a collector-to-emitter voltage rating of 100 V and a maximum DC collector current of 2 A. The device utilizes FBET and MBIT processes to achieve high breakdown voltage and large current capacity within an ultrasmall form factor. Key electrical characteristics include a gain-bandwidth product of 120 MHz at 100 mA, a minimum DC current gain of 100, and a low collector-to-emitter saturation voltage. The component is lead-free and halide-free.

Single Bipolar Transistors Feature Summary

• Adopts FBET and MBIT processes for enhanced performance
• Provides high breakdown voltage and large current capacity
• Features an ultrasmall size suitable for high-density hybrid ICs

Single Bipolar Transistors Applications

• High-frequency amplifier circuits
• Switching applications requiring low saturation voltage
• High-density small-sized hybrid integrated circuits

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'S' against the datasheet ordering information to confirm the hFE rank classification. Ensure the procurement documentation references the correct PCP package type and tape-and-reel specifications. Confirm compliance with RoHS and halide-free requirements as stated in the manufacturer's ordering guide.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits that require a robust NPN transistor with a 100 V collector-to-emitter voltage rating and 2 A continuous current capability. The low saturation voltage makes it suitable for efficient switching applications. Consider the ultrasmall PCP package dimensions if space constraints are critical for the target hybrid IC design.

Single Bipolar Transistors Part Context

This part belongs to the 2SC3647 series, which includes complementary PNP devices such as the 2SA1417. The series is characterized by its use of advanced epitaxial planar silicon processes. The S suffix specifically denotes a defined DC current gain ranking, distinguishing it from other variants like the T suffix within the same family.

Single Bipolar Transistors Replacement Considerations

The 2SC3647T-TD-E is a confirmed substitute within the same series, differing primarily in the hFE rank classification.