2SC3649T-TD-E

Single Bipolar Transistors Overview

The onsemi 2SC3649T-TD-E is a single NPN bipolar junction transistor housed in a PCP (TO-243AA) surface-mount package. It features a collector-to-emitter voltage rating of 160 V and a continuous collector current capacity of 1.5 A. The device utilizes FBET and MBIT processes to achieve low saturation voltage characteristics. Key electrical parameters include a gain-bandwidth product of 120 MHz, a maximum DC current gain of 400 at 100 mA, and a collector cutoff current of 1 µA. It supports a junction temperature up to 150 °C and offers a power dissipation of 500 mW.

Single Bipolar Transistors Feature Summary

• High breakdown voltage combined with large current capacity for robust operation
• Low collector-to-emitter saturation voltage achieved through specialized process technology
• Ultrasmall physical footprint designed to facilitate high-density hybrid integrated circuits

Single Bipolar Transistors Applications

• High-density small-sized hybrid ICs
• General-purpose switching applications requiring high voltage tolerance
• Power management circuits utilizing surface-mount assembly

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official documentation to confirm compliance requirements. The 'E' suffix indicates Pb-free status, while the 'H' suffix denotes both Pb-free and Halogen-free specifications. Confirm that the required hFE rank aligns with the application's gain requirements before finalizing procurement.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits necessitating a 160 V blocking capability with a 1.5 A current handling limit in a compact SMD form factor. Consider the thermal constraints carefully, as standard power dissipation is limited to 500 mW without additional heatsinking. Ensure the base drive current is sufficient to maintain low saturation voltages during switching operations.

Single Bipolar Transistors Part Context

This part belongs to the 2SC3649 series manufactured by onsemi. It serves as the NPN counterpart to the 2SA1419 PNP transistor within the same family. Both devices share identical pinouts and mechanical dimensions, facilitating complementary circuit designs. The series is engineered for applications demanding high reliability and miniaturization in semiconductor components.

Single Bipolar Transistors Replacement Considerations

The datasheet identifies the 2SA1419T-TD-E as a related device within the same family. No other direct substitute part numbers are explicitly confirmed in the provided documentation.