2SC3661-U-TB-E

Single Bipolar Transistors Overview

The 2SC3661-U-TB-E is an NPN bipolar junction transistor manufactured by onsemi. It features a collector-emitter breakdown voltage of 25 V and a maximum collector current of 0.3 A. The device utilizes the FBET process to achieve high DC current gain, typically ranging from 800 to 3200. Designed for surface mount applications, it offers a compact footprint suitable for space-constrained electronic designs.

Single Bipolar Transistors Feature Summary

• Utilizes FBET process technology for enhanced performance
• Provides high DC current gain for efficient signal amplification
• Compact surface mount package design facilitates miniaturization

Single Bipolar Transistors Applications

• Low-frequency general-purpose amplifiers
• Driver circuits
• Muting circuits

Single Bipolar Transistors Procurement Notes

Verify the manufacturer origin carefully, as this component was originally developed by Sanyo Semiconductor, which has since been acquired by onsemi. Ensure the specific suffix matches the required tape and reel configuration for automated assembly processes. Cross-reference datasheets to confirm pinout compatibility with existing PCB layouts.

Single Bipolar Transistors Selection Notes

Select this component when high current gain is required in a small form factor. It is appropriate for low-frequency analog applications where moderate power dissipation is acceptable. Consider thermal management requirements due to the small package size. Evaluate the 25 V voltage rating against circuit operating conditions to ensure adequate safety margins.

Single Bipolar Transistors Part Context

This part belongs to the 2SC3661 series of NPN transistors. The series is characterized by its use in consumer electronics and portable devices where size reduction is critical. The transition from Sanyo to onsemi represents a consolidation of semiconductor manufacturing resources while maintaining the original technical specifications and performance characteristics.

Single Bipolar Transistors Replacement Considerations

Compatible substitutes include the 2SC3661-TB-E and other variants within the 2SC3661 family. Verify that alternative parts maintain the same FBET process characteristics and pin configuration to ensure direct interchangeability without circuit modification.