2SC3672-O(T2ASH,FM

Description：TRANS NPN 300V 0.1A MSTM
Series：-

SKU:2211d7d5841b Category: Single Bipolar Transistors Brand: Toshiba Semiconductor and Storage

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Product introduction

2SC3672-O(T2ASH,FM is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS NPN 300V 0.1A MSTM. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC3672-O(T2ASH,FM

Description：TRANS NPN 300V 0.1A MSTM
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Bulk
Transistor Type：NPN
Current - Collector (Ic) (Max)：100 mA
Voltage - Collector Emitter Breakdown (Max)：300 V
Vce Saturation (Max) @ Ib, Ic：500mV @ 2mA, 20mA
Current - Collector Cutoff (Max)：100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：30 @ 20mA, 10V
Power - Max：1 W
Frequency - Transition：80MHz
Operating Temperature：150°C (TJ)
Mounting Type：Through Hole
Package / Case：SC-71
Supplier Device Package：MSTM
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2SC3672-O(T2ASH,FM

2SC3672-O(T2ASH,FM

Single Bipolar Transistors Overview

The Toshiba 2SC3672 is a silicon NPN triple-diffused transistor manufactured using the PCT process. It features high breakdown voltages of 300 V for both collector-base and collector-emitter configurations, with an emitter-base voltage rating of 6 V. The device supports a maximum collector current of 100 mA and base current of 20 mA, dissipating up to 1000 mW at 25°C. Electrical characteristics include a typical transition frequency of 80 MHz and a low saturation voltage of 0.5 V max at 20 mA collector current.

Single Bipolar Transistors Feature Summary

High-voltage capability with 300 V collector-base and collector-emitter breakdown ratings
Low collector saturation voltage for efficient switching performance
Small collector output capacitance to support high-frequency operation
Complementary pairing available with the 2SA1432 PNP transistor

Single Bipolar Transistors Applications

Plasma display driver circuits
Nixie tube driver applications
Cathode ray tube brightness control systems

Single Bipolar Transistors Procurement Notes

Verify RoHS compatibility status through official Toshiba sales representatives, as markings indicate specific environmental compliance levels. Confirm package type matches the JEDEC 2-7D101A specification. Review the Toshiba Semiconductor Reliability Handbook for derating concepts before finalizing designs. Ensure application conditions remain within absolute maximum ratings to maintain product reliability over time.

Single Bipolar Transistors Selection Notes

Select this component for high-voltage control applications requiring low saturation voltage and small output capacitance. Verify that the required collector current does not exceed 100 mA continuous limits. Consider the complementary 2SA1432 if a matched PNP/NPN pair is needed for push-pull or differential circuit topologies. Ensure operating temperatures stay within the specified junction range.

Single Bipolar Transistors Part Context

This device belongs to Toshiba's discrete semiconductor transistor portfolio, utilizing the PCT (Plasma Chemical Triple Diffusion) process technology. It is designed specifically for general electronics applications involving high-voltage switching and amplification tasks where low noise and fast response are critical requirements.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SA1432 as the complementary PNP counterpart. No other direct substitute part numbers are documented in the provided source material.