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Product Detailed Parameters
- Description：BIP NPN 70MA 16V FT=3G
- Series：*
- Mfr：onsemi
- Package：Bulk
- Transistor Type：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Frequency - Transition：-
- Noise Figure (dB Typ @ f)：-
- Gain：-
- Power - Max：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Current - Collector (Ic) (Max)：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The onsemi 2SC3772-4-TB-E is an NPN silicon RF bipolar junction transistor designed for high-frequency applications. It operates with a collector-emitter voltage of 10 V and supports a continuous collector current of 70 mA. The device features a transition frequency of 3.0 GHz, enabling performance in UHF bands. Key electrical parameters include a typical noise figure of 2.5 dB at 0.9 GHz and a maximum available gain of 12 dB at the same frequency. Power dissipation is rated at 200 mW, with a maximum operating junction temperature of 150°C. The component is housed in a compact surface-mount package suitable for space-constrained designs.
Feature Summary
- Optimized for low-noise amplification in UHF frequency converters and local oscillators
- High power gain characteristics suitable for wide-band amplifier applications
- Small physical footprint utilizing a surface-mount package for automated assembly
Applications
- UHF frequency converters
- Local oscillators
- Low-noise amplifiers
- Wide-band amplifiers
Procurement Notes
Verify the specific suffix -4-TB-E against the manufacturer's official datasheet to confirm packaging and tape-and-reel specifications. Ensure compatibility with RoHS and REACH regulations required by your region. Confirm that the 200 mW power dissipation rating aligns with your thermal management design constraints before finalizing procurement orders.
Selection Notes
Select this component when designing circuits requiring a 3.0 GHz transition frequency with minimal noise contribution. Compare the 2.5 dB noise figure and 12 dB gain metrics against alternative RF transistors to ensure optimal signal-to-noise ratio for your specific UHF application requirements.
Part Context
This part belongs to the 2SC3772 series of RF bipolar transistors manufactured by onsemi. The series is engineered for UHF operations, offering consistent performance across oscillator, mixer, and amplifier roles. The specific model variant indicates standard commercial-grade reliability and packaging configuration.
Replacement Considerations
Consult the manufacturer's official cross-reference documentation for verified substitute part numbers. Do not assume functional equivalence with other RF transistors without verifying pinout compatibility and electrical parameter alignment.
FAQ
What is the typical noise figure of the 2SC3772-4-TB-E?
The typical noise figure is 2.5 dB at a frequency of 0.9 GHz.
What is the maximum operating junction temperature?
The maximum operating junction temperature is 150°C.
Is this transistor suitable for wide-band amplification?
Yes, the datasheet lists wide-band amplifiers as a primary application due to its high cutoff frequency and gain characteristics.
