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The Sanyo 2SC3775-3-TB-E is an NPN silicon epitaxial planar transistor designed for UHF low-noise and wide-band amplifier applications. It operates in the ultra-high frequency band with a maximum collector current of 0.07 A and a collector-emitter breakdown voltage of 12 V. The device features a small noise figure of 2.2 dB typical at 0.9 GHz, high power gain of 14 dB typical at 0.9 GHz, and a cutoff frequency of 5.0 GHz typical. It utilizes a TO-92 cylindrical package with three terminals and supports a maximum operating temperature of 150 °C.
Verify the specific suffix -3-TB-E against official Sanyo documentation to confirm tape-and-reel packaging details and binning specifications. Ensure compatibility with existing PCB footprints for the TO-92 package. Confirm RoHS compliance status through the manufacturer's latest certification records before integration into production.
Select this component when designing circuits requiring low noise figures around 2.2 dB at 0.9 GHz. Consider the 12 V collector-emitter voltage limit for biasing networks. Compare performance metrics against similar models like the 2SC3774 or 2SC3776 if different gain or frequency characteristics are required for the specific application bandwidth.
This part belongs to the Sanyo 2SC377x series of UHF transistors, which includes variants such as the 2SC3774, 2SC3776, and 2SC3778. These devices share similar structural designs but may differ in specific electrical parameters like noise figure and gain. The series is engineered for consistent performance in high-frequency analog signal processing tasks.
Direct substitutes within the same family include the 2SC3774 and 2SC3776. Verify pinout compatibility and electrical parameter overlaps before substitution. Cross-reference datasheets to ensure the alternative model meets the specific noise and gain requirements of the original design.